{"title":"GaAs场效应管磁跨导迁移率曲线与射频性能的关系","authors":"S. K. Chan, K. Lau, P. White","doi":"10.1109/MWSYM.1985.1131941","DOIUrl":null,"url":null,"abstract":"The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Relationship of Magnetotransconductance Mobility Profiles and RF Performance of GaAs FETs\",\"authors\":\"S. K. Chan, K. Lau, P. White\",\"doi\":\"10.1109/MWSYM.1985.1131941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1131941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Relationship of Magnetotransconductance Mobility Profiles and RF Performance of GaAs FETs
The mobility profiles of FET channels were measured on fabricated low noise and power GaAs MESFETs, using the recently developed magnetotransconductance technique. The results are used to study the correlation between the RF performance and the material parameter.
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