{"title":"用微拉曼光谱评价斜面半导体结构上的/spl δ /层深度分布","authors":"B. Rheinlander, R. Srnánek, J. Kováč","doi":"10.1109/ASDAM.2002.1088506","DOIUrl":null,"url":null,"abstract":"The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si /spl delta/-doped layer was performed. Excellent agreement with measured spectra was obtained.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"287 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evaluation of /spl delta/-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy\",\"authors\":\"B. Rheinlander, R. Srnánek, J. Kováč\",\"doi\":\"10.1109/ASDAM.2002.1088506\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si /spl delta/-doped layer was performed. Excellent agreement with measured spectra was obtained.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"287 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088506\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088506","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evaluation of /spl delta/-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy
The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si /spl delta/-doped layer was performed. Excellent agreement with measured spectra was obtained.
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