BiCMOS压控振荡器尾电流整形技术的相位噪声分析

J. Lambrechts, S. Sinha
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引用次数: 4

摘要

采用尾电流整形技术实现了一种硅锗交叉耦合差分对窄带压控振荡器,并给出了实验结果。在片上制作了几个vco进行实际比较,并将结果与仿真结果进行了比较。仿真结果提供了3.3 dBc/Hz的改进,从−105.3 dBc/Hz到−108.6 dBc/Hz。实测结果证实了仿真与样机的相位噪声性能的相关性。与以前的工作相比,可接受的相位噪声性能是使用相对经济有效的技术实现的。
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Phase noise analysis of a tail-current shaping technique employed on a BiCMOS voltage controlled oscillator
A BiCMOS Silicon Germanium cross-coupled differential-pair narrowband voltage controlled oscillator with a tail-current shaping technique to improve phase noise performance is implemented and experimental results are presented. Several VCOs are fabricated on-chip to serve for a practical comparison and the results are also compared to simulated results. Simulation results provided a 3.3 dBc/Hz improvement from −105.3 dBc/Hz to −108.6 dBc/Hz at a 1 MHz offset frequency from the 5 GHz carrier. Measured results confirm the correlation of phase noise performance between simulation and prototype. Acceptable phase noise performance compared to previous works is achieved using a relatively cost-effective technology.
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