移动自旋从实验室到工厂:量子计算设备技术的硅基平台

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782903

B. Govoreanu, S. Kubicek, J. Jussot, B. T. Chan, N. Dumoulin-Stuyck, F. Mohiyaddin, R. Li, G. Simion, T. Ivanov, D. Mocuta, Jae Woo Lee, I. Radu

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引用次数: 8

摘要

我们讨论了一个300毫米集成硅MOS平台的关键特征，作为自旋量子比特器件探索的基础。该工艺产生的结构间距为100nm及以下，无需承担先进光学光刻的复杂性，并保留了快速调整器件设计的高度灵活性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Moving Spins From Lab to Fab: A Silicon-Based Platform for Quantum Computing Device Technologies

We discuss the key features of a 300mm integrated Silicon MOS platform to serve as a basis for spin-qubit device exploration. The process yields structures with a pitch of 100nm and below, without bearing the complexity of advanced optical lithography, and retains high flexibility for fast device design adjustment.

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2019 Silicon Nanoelectronics Workshop (SNW)

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