迈向更真实的垂直堆叠多个SiNW场效应管的NEGF模拟

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI:10.1109/SISPAD.2018.8551692

Hong-hyun Park, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim

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引用次数: 3

摘要

本文给出了基于非平衡格林函数(NEGF)方法的垂直堆叠多硅纳米线场效应管(SiNW)量子输运模拟结果。为了考虑更现实的器件条件，如多通道场效应管的复杂几何结构和各种载流子散射过程，我们改进了NEGF模拟的物理模型和数值技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Toward more realistic NEGF simulations of vertically stacked multiple SiNW FETs

We present quantum transport simulation results of vertically stacked multiple silicon nanowire (SiNW) FETs based on the non-equilibrium Green's function (NEGF) method. In order to consider more realistic device conditions such as complex geometry of the multi-channel FETs andvarious carrier scattering processes, we improved physical models and numerical techniques forthe NEGF simulations.

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2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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