高na极紫外光刻新功能表面处理工艺及引物

Wataru Shibayama, Shuhei Shigaki, S. Takeda, Kodai Kato, M. Nakajima, Rikimaru Sakamoto
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引用次数: 0

摘要

对于EUV高NA光刻,目前传统的三层工艺在EUV光刻性能和图案蚀刻转移方面存在关键问题。特别是由于最新的EUV PR(包括CAR和MOR)的膜厚度非常低,约为10nm,含硅硬掩膜(Si- hm)应在5nm左右。在这种情况下,很难转移到SOC和底层硬掩膜层。为了防止这一关键问题,我们在传统的CVD硬掩膜或Si-HM上提出了新的功能表面处理工艺和底漆(FSTP)。这种FSTP是旋转涂层材料。然而,它几乎是单分子型超薄底漆(~1nm),适用于所有硬掩膜(SiON, SiN, TiN, SiO2, SiHM, SOG等)上的CVD和自旋,不会影响精细间距图案转移。此外,该FSTP对EUV、PR、CAR和MOR具有较高的通用性,可在EUVL中实现较高的图形化性能。因此,FSTP在EUV光刻工艺和下一代高NA EUV工艺的图案蚀刻转移方面具有很大的优势。
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New functional surface treatment process and primers for high-NA EUV lithography
For EUV high NA lithography, current conventional tri-layer procss has the critical issue both for EUV litho performance & pattern etch transfer. Especially since the latest EUV PR including CAR and MOR is very low film thickness around 10nm, Si containing hard mask (Si-HM) should be around 5nm. In this case, it is too difficult to transfer to SOC and the bottom hard mask layer. In order to prevent this critical issue, we proose new functional surface treatment process and primers (FSTP) on the conventional CVD hard mask or Si-HM. This FSTP is spin coating materials. However it is almost sigle molecular type ultra thin primer (~1nm) for all of the CVD & spin on hard mask (SiON, SiN, TiN, SiO2, SiHM, SOG and so on) not to bother fine pitch pattern transfer. Moreover, this FSTP has high universalithy to EUV PR CAR and MOR to achieve high patterning performance in EUVL. Therefore FSTP has big advantage in EUV litho process and pattern etch transfer for next generation High NA EUV process.
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