纳米技术中的导线延迟变异性及其对物理设计的影响

S. Nassif, Gi-Joon Nam, Shayak Banerjee
{"title":"纳米技术中的导线延迟变异性及其对物理设计的影响","authors":"S. Nassif, Gi-Joon Nam, Shayak Banerjee","doi":"10.1109/ISQED.2013.6523671","DOIUrl":null,"url":null,"abstract":"Current technology scaling trends are changing the character of wire delay variability. The distribution of wire delay is asymmetric, with a long positive tail which can be as much as 2X longer than the negative tail. This is due to the geometry of these wires, where the aspect ratio is biased towards tall thin wire cross-sections, as well as manufacturing induced variations particularly from lithography. These trends are important for timing closure, whether done via corner-based or statistical analysis. In this paper, we explore these trends, demonstrate their impact in a modern 32nm CMOS design, and suggest ways in which this trend can be managed and reduced. Particularly, through physical synthesis optimization on industrial designs, we show how these trends/observations can be utilized to produce more reliable designs. As the interconnect scaling lags behind the device scaling, the importance of wire variability will grow further in the future technology nodes.","PeriodicalId":127115,"journal":{"name":"International Symposium on Quality Electronic Design (ISQED)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Wire delay variability in nanoscale technology and its impact on physical design\",\"authors\":\"S. Nassif, Gi-Joon Nam, Shayak Banerjee\",\"doi\":\"10.1109/ISQED.2013.6523671\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Current technology scaling trends are changing the character of wire delay variability. The distribution of wire delay is asymmetric, with a long positive tail which can be as much as 2X longer than the negative tail. This is due to the geometry of these wires, where the aspect ratio is biased towards tall thin wire cross-sections, as well as manufacturing induced variations particularly from lithography. These trends are important for timing closure, whether done via corner-based or statistical analysis. In this paper, we explore these trends, demonstrate their impact in a modern 32nm CMOS design, and suggest ways in which this trend can be managed and reduced. Particularly, through physical synthesis optimization on industrial designs, we show how these trends/observations can be utilized to produce more reliable designs. As the interconnect scaling lags behind the device scaling, the importance of wire variability will grow further in the future technology nodes.\",\"PeriodicalId\":127115,\"journal\":{\"name\":\"International Symposium on Quality Electronic Design (ISQED)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Quality Electronic Design (ISQED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2013.6523671\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Quality Electronic Design (ISQED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2013.6523671","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

当前的技术缩放趋势正在改变线延迟可变性的特性。线延迟的分布是不对称的,有一条较长的正尾,比负尾长2X。这是由于这些导线的几何形状,其中纵横比偏向于高细导线横截面,以及制造引起的变化,特别是光刻。无论是通过街角分析还是统计分析,这些趋势对于计时关闭都很重要。在本文中,我们探讨了这些趋势,展示了它们在现代32nm CMOS设计中的影响,并提出了管理和减少这种趋势的方法。特别是,通过工业设计的物理合成优化,我们展示了如何利用这些趋势/观察结果来生产更可靠的设计。由于互连扩展滞后于器件扩展,因此在未来的技术节点中,导线可变性的重要性将进一步增长。
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Wire delay variability in nanoscale technology and its impact on physical design
Current technology scaling trends are changing the character of wire delay variability. The distribution of wire delay is asymmetric, with a long positive tail which can be as much as 2X longer than the negative tail. This is due to the geometry of these wires, where the aspect ratio is biased towards tall thin wire cross-sections, as well as manufacturing induced variations particularly from lithography. These trends are important for timing closure, whether done via corner-based or statistical analysis. In this paper, we explore these trends, demonstrate their impact in a modern 32nm CMOS design, and suggest ways in which this trend can be managed and reduced. Particularly, through physical synthesis optimization on industrial designs, we show how these trends/observations can be utilized to produce more reliable designs. As the interconnect scaling lags behind the device scaling, the importance of wire variability will grow further in the future technology nodes.
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