{"title":"不同温度下半导体光接收器光谱响应率对光学测量的影响","authors":"A. Polyakov, M. A. Ksenofontov","doi":"10.1109/CAOL.2010.5634213","DOIUrl":null,"url":null,"abstract":"The analytical expressions allowing to calculate spectral responsivity of semiconductor receivers of optical radiation with an error no more 5 % in all spectral range are developed. Criteria of a choice of radiation wavelength and accuracy of radiation power stabilization of the injection laser in view of temperature dependence of semiconductor photodetector spectral responsivity have been received.","PeriodicalId":254986,"journal":{"name":"2010 International Conference on Advanced Optoelectronics and Lasers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Influence of semiconductor photoreceiver spectral responsivity at different temperature on optical measurements\",\"authors\":\"A. Polyakov, M. A. Ksenofontov\",\"doi\":\"10.1109/CAOL.2010.5634213\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The analytical expressions allowing to calculate spectral responsivity of semiconductor receivers of optical radiation with an error no more 5 % in all spectral range are developed. Criteria of a choice of radiation wavelength and accuracy of radiation power stabilization of the injection laser in view of temperature dependence of semiconductor photodetector spectral responsivity have been received.\",\"PeriodicalId\":254986,\"journal\":{\"name\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 International Conference on Advanced Optoelectronics and Lasers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CAOL.2010.5634213\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Advanced Optoelectronics and Lasers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CAOL.2010.5634213","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Influence of semiconductor photoreceiver spectral responsivity at different temperature on optical measurements
The analytical expressions allowing to calculate spectral responsivity of semiconductor receivers of optical radiation with an error no more 5 % in all spectral range are developed. Criteria of a choice of radiation wavelength and accuracy of radiation power stabilization of the injection laser in view of temperature dependence of semiconductor photodetector spectral responsivity have been received.
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