J. Janı́k, F. Balon, A. Kromka, V. Dúbravcová, M. Kadlecíková, P. Krepsova
{"title":"在圆柱形电极结构下测量钨丝上金刚石层的电子发射","authors":"J. Janı́k, F. Balon, A. Kromka, V. Dúbravcová, M. Kadlecíková, P. Krepsova","doi":"10.1109/ASDAM.2002.1088480","DOIUrl":null,"url":null,"abstract":"Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm/sup 2/ at 3 V//spl mu/m while the turn-on field was about 2 V//spl mu/m. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was /spl Phi/=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Electron emission from diamond layer on tungsten wire measured in cylindrical electrode configuration\",\"authors\":\"J. Janı́k, F. Balon, A. Kromka, V. Dúbravcová, M. Kadlecíková, P. Krepsova\",\"doi\":\"10.1109/ASDAM.2002.1088480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm/sup 2/ at 3 V//spl mu/m while the turn-on field was about 2 V//spl mu/m. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was /spl Phi/=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron emission from diamond layer on tungsten wire measured in cylindrical electrode configuration
Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm/sup 2/ at 3 V//spl mu/m while the turn-on field was about 2 V//spl mu/m. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was /spl Phi/=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.