基于贝叶斯的IDDQ电流签名过程参数估计

Michihiro Shintani, Takashi Sato
{"title":"基于贝叶斯的IDDQ电流签名过程参数估计","authors":"Michihiro Shintani, Takashi Sato","doi":"10.1109/VTS.2012.6231085","DOIUrl":null,"url":null,"abstract":"Post-fabrication performance compensation and adaptive delay testing are effective means to improve yield and reliability of LSIs. In these methods, process parameter estimation plays a key role. In this paper, we propose a novel technique for accurate on-chip process parameter estimation. The proposed technique is based on Bayes' theorem, in which on-chip parameters, such as threshold voltages, are estimated by current signatures obtained within a regular IDDQ testing. No additional circuit and additional measurements are required for the purpose of estimation. Numerical experiments demonstrate that the proposed technique can achieve less than 10 mV accuracy in estimating threshold voltages.","PeriodicalId":169611,"journal":{"name":"2012 IEEE 30th VLSI Test Symposium (VTS)","volume":"60 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A Bayesian-based process parameter estimation using IDDQ current signature\",\"authors\":\"Michihiro Shintani, Takashi Sato\",\"doi\":\"10.1109/VTS.2012.6231085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Post-fabrication performance compensation and adaptive delay testing are effective means to improve yield and reliability of LSIs. In these methods, process parameter estimation plays a key role. In this paper, we propose a novel technique for accurate on-chip process parameter estimation. The proposed technique is based on Bayes' theorem, in which on-chip parameters, such as threshold voltages, are estimated by current signatures obtained within a regular IDDQ testing. No additional circuit and additional measurements are required for the purpose of estimation. Numerical experiments demonstrate that the proposed technique can achieve less than 10 mV accuracy in estimating threshold voltages.\",\"PeriodicalId\":169611,\"journal\":{\"name\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"volume\":\"60 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 30th VLSI Test Symposium (VTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTS.2012.6231085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 30th VLSI Test Symposium (VTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTS.2012.6231085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

后期性能补偿和自适应延迟测试是提高lsi成品率和可靠性的有效手段。在这些方法中,过程参数估计起着关键作用。在本文中,我们提出了一种精确的片上工艺参数估计的新技术。所提出的技术是基于贝叶斯定理,其中芯片上的参数,如阈值电压,是通过在常规IDDQ测试中获得的电流特征来估计的。不需要额外的电路和额外的测量来进行估计。数值实验表明,该方法对阈值电压的估计精度可以达到小于10 mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A Bayesian-based process parameter estimation using IDDQ current signature
Post-fabrication performance compensation and adaptive delay testing are effective means to improve yield and reliability of LSIs. In these methods, process parameter estimation plays a key role. In this paper, we propose a novel technique for accurate on-chip process parameter estimation. The proposed technique is based on Bayes' theorem, in which on-chip parameters, such as threshold voltages, are estimated by current signatures obtained within a regular IDDQ testing. No additional circuit and additional measurements are required for the purpose of estimation. Numerical experiments demonstrate that the proposed technique can achieve less than 10 mV accuracy in estimating threshold voltages.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Derating based hardware optimizations in soft error tolerant designs Exploiting X-correlation in output compression via superset X-canceling SAT-ATPG using preferences for improved detection of complex defect mechanisms Smart selection of indirect parameters for DC-based alternate RF IC testing Write-through method for embedded memory with compression Scan-based testing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1