Junsung Park, Minjae Kim, Jae‐Hyung Jang, Sung-Min Hong
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Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories
The HfO2-based resistive random-access-memory (RRAM) is studied. In the first part, two parameters of oxygen vacancies are extracted. The migration barrier of the oxygen vacancy (or the extended Frenkel pair) is calculated. The resistivity of a filament is also calculated. In the second part, an existing compact model for the RRAM is implemented and its results are compared with the experimental data
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