功率mosfet本征Qrr的新提取方法

2023 35th International Conference on Microelectronic Test Structure (ICMTS) Pub Date : 2023-03-27 DOI:10.1109/ICMTS55420.2023.10094069

T. Hara, S. Nakajima, T. Ohguro, K. Miyashita

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摘要

我们首次在测量系统中提出了在没有寄生电感的情况下估计固有Qrr ($Q_{r_{-}\text{int}})$的方法。本文通过TCAD仿真分析了寄生电感对Qrr的依赖性，提出了去除寄生电感效应的方法以及复合放电载流子(qr_into)的计算方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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New Extraction Method for Intrinsic Qrr of Power MOSFETs

We provide the method to estimate intrinsic Qrr ($Q_{r_{-}\text{int}})$ without parasitic inductance in the measurement system for the first time. In this paper, we analyze parasitic inductance dependence of Qrr by TCAD simulation and we propose the method for removing the parasitic inductance effect as well as calculating the carrier of recombination and discharge (qr_into).

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2023 35th International Conference on Microelectronic Test Structure (ICMTS)

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