{"title":"三维混合信号集成电路的设计方法:一个实用的12位SAR ADC设计案例","authors":"Wulong Liu, Guoqing Chen, Xuefeng Han, Yu Wang, Yuan Xie, Huazhong Yang","doi":"10.1145/2593069.2593122","DOIUrl":null,"url":null,"abstract":"Three-dimensional (3D) integration technology has been proposed as a promising technology to provide small footprint, reduced wire-length, and the capability of heterogeneous integration. In particular, 3D IC is a good candidate to address the design issues in conventional analog/digital mixed-signal IC designs. In this work, we focus on modeling and analyzing the impacts of through silicon vias (TSVs) on mixed-signal ICs. Based on the analysis, a set of design methodologies for 3D mixed-signal ICs are proposed. The design methodologies are verified with a case study, in which a 12-bit successive approximation register analog-to-digital converter (SAR ADC) is re-designed by partitioning it into three stacked layers for 3D integration. The experimental results show that, compared to the traditional 2D counterpart, our 3D SAR ADC with optimized TSV placement can achieve significant area and power reduction, and performance improvement. Specifically, due to the isolation of substrate noise disturbance in our 3D design, the signal-to-noise-plus-distortion ratio (SNDR) is improved from 68.74 dB to 74.12 dB.","PeriodicalId":433816,"journal":{"name":"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Design methodologies for 3D mixed signal integrated circuits: A practical 12-bit SAR ADC design case\",\"authors\":\"Wulong Liu, Guoqing Chen, Xuefeng Han, Yu Wang, Yuan Xie, Huazhong Yang\",\"doi\":\"10.1145/2593069.2593122\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Three-dimensional (3D) integration technology has been proposed as a promising technology to provide small footprint, reduced wire-length, and the capability of heterogeneous integration. In particular, 3D IC is a good candidate to address the design issues in conventional analog/digital mixed-signal IC designs. In this work, we focus on modeling and analyzing the impacts of through silicon vias (TSVs) on mixed-signal ICs. Based on the analysis, a set of design methodologies for 3D mixed-signal ICs are proposed. The design methodologies are verified with a case study, in which a 12-bit successive approximation register analog-to-digital converter (SAR ADC) is re-designed by partitioning it into three stacked layers for 3D integration. The experimental results show that, compared to the traditional 2D counterpart, our 3D SAR ADC with optimized TSV placement can achieve significant area and power reduction, and performance improvement. Specifically, due to the isolation of substrate noise disturbance in our 3D design, the signal-to-noise-plus-distortion ratio (SNDR) is improved from 68.74 dB to 74.12 dB.\",\"PeriodicalId\":433816,\"journal\":{\"name\":\"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1145/2593069.2593122\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 51st ACM/EDAC/IEEE Design Automation Conference (DAC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2593069.2593122","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
摘要
三维集成技术具有占地面积小、缩短线长和异构集成能力等优点,是一种很有前途的集成技术。特别是,3D集成电路是解决传统模拟/数字混合信号集成电路设计问题的一个很好的候选人。在这项工作中,我们专注于建模和分析透硅过孔(tsv)对混合信号集成电路的影响。在此基础上,提出了一套三维混合信号集成电路的设计方法。通过一个案例研究验证了设计方法,其中通过将12位连续逼近寄存器模数转换器(SAR ADC)划分为三个堆叠层进行3D集成,重新设计了该设计方法。实验结果表明,与传统的2D SAR ADC相比,优化了TSV布局的3D SAR ADC可以显著减少面积和功耗,并提高性能。具体来说,由于在我们的3D设计中隔离了衬底噪声干扰,信噪比(SNDR)从68.74 dB提高到74.12 dB。
Design methodologies for 3D mixed signal integrated circuits: A practical 12-bit SAR ADC design case
Three-dimensional (3D) integration technology has been proposed as a promising technology to provide small footprint, reduced wire-length, and the capability of heterogeneous integration. In particular, 3D IC is a good candidate to address the design issues in conventional analog/digital mixed-signal IC designs. In this work, we focus on modeling and analyzing the impacts of through silicon vias (TSVs) on mixed-signal ICs. Based on the analysis, a set of design methodologies for 3D mixed-signal ICs are proposed. The design methodologies are verified with a case study, in which a 12-bit successive approximation register analog-to-digital converter (SAR ADC) is re-designed by partitioning it into three stacked layers for 3D integration. The experimental results show that, compared to the traditional 2D counterpart, our 3D SAR ADC with optimized TSV placement can achieve significant area and power reduction, and performance improvement. Specifically, due to the isolation of substrate noise disturbance in our 3D design, the signal-to-noise-plus-distortion ratio (SNDR) is improved from 68.74 dB to 74.12 dB.