基于DMOS驱动器的金属化模式快速形状优化

Bo Yang, S. Nakatake, H. Murata
{"title":"基于DMOS驱动器的金属化模式快速形状优化","authors":"Bo Yang, S. Nakatake, H. Murata","doi":"10.1109/ISQED.2008.98","DOIUrl":null,"url":null,"abstract":"This paper addresses the problem of optimizing metallization patterns of back-end connections for the DMOS based driver since the back-end connections trend to dominate the overall on-resistance Ron. We propose a heuristic algorithm to seek for better shapes for the patterns targeting at minimizing Ron and at balancing the current distribution. In order to speed up the analysis, the equivalent resistance network of the driver is modified by inserting ideal switches to keep the conductance matrix constant. Simulation on two drivers from industrial TEG data demonstrates that our algorithm can reduce Ron effectively by shaping metals appropriately within a given routing area.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Fast Shape Optimization of Metallization Patterns for DMOS Based Driver\",\"authors\":\"Bo Yang, S. Nakatake, H. Murata\",\"doi\":\"10.1109/ISQED.2008.98\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper addresses the problem of optimizing metallization patterns of back-end connections for the DMOS based driver since the back-end connections trend to dominate the overall on-resistance Ron. We propose a heuristic algorithm to seek for better shapes for the patterns targeting at minimizing Ron and at balancing the current distribution. In order to speed up the analysis, the equivalent resistance network of the driver is modified by inserting ideal switches to keep the conductance matrix constant. Simulation on two drivers from industrial TEG data demonstrates that our algorithm can reduce Ron effectively by shaping metals appropriately within a given routing area.\",\"PeriodicalId\":243121,\"journal\":{\"name\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"9th International Symposium on Quality Electronic Design (isqed 2008)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2008.98\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.98","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

由于后端连接将主导整个导通电阻,因此本文讨论了优化基于DMOS驱动的后端连接金属化模式的问题。我们提出了一种启发式算法,以寻找更好的形状为目标,以最小化Ron和平衡当前分布的模式。为了加快分析速度,通过插入理想开关来修改驱动器等效电阻网络,以保持电导矩阵不变。对来自工业TEG数据的两个驱动程序的仿真表明,我们的算法可以通过在给定的路由区域内适当地对金属进行整形来有效地减少Ron。
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Fast Shape Optimization of Metallization Patterns for DMOS Based Driver
This paper addresses the problem of optimizing metallization patterns of back-end connections for the DMOS based driver since the back-end connections trend to dominate the overall on-resistance Ron. We propose a heuristic algorithm to seek for better shapes for the patterns targeting at minimizing Ron and at balancing the current distribution. In order to speed up the analysis, the equivalent resistance network of the driver is modified by inserting ideal switches to keep the conductance matrix constant. Simulation on two drivers from industrial TEG data demonstrates that our algorithm can reduce Ron effectively by shaping metals appropriately within a given routing area.
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