p型半导体碳纳米管中空穴的相干输运

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC. Pub Date : 2004-06-21 DOI:10.1109/DRC.2004.1367824

T. Kamimura, C. Hyon, A. Kojima, M. Maeda, K. Matsumoto

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引用次数: 0

摘要

本文成功地观察了长度为4.5 /spl μ m /m的碳纳米管在8.6 K下库仑电荷效应和空穴相干输运的共存。为此制备了一种后栅型碳纳米管场效应晶体管。测量了漏极电流-栅极电压特性、库仑金刚石特性和周期负差分电导。结果证实了半导体碳纳米管中空穴的库仑电荷效应和弹道输运共存。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Coherent transport of hole in p type semiconductive carbon nanotube

In this paper, we have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of holes in a carbon nanotube of length 4.5 /spl mu/m at 8.6 K. A back gate type carbon nanotube field effect transistor was fabricated for this purpose. The drain current-gate voltage characteristics, Coulomb diamond characteristics, and periodic negative differential conductance were measured. Results confirm the coexistence of the Coulomb charging effect and ballistic transport of the holes in semiconductive carbon nanotubes.

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Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC.

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