具有拆分有源半导体和源极/漏极的高鲁棒性氧化薄膜晶体管

2017 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2017-12-01 DOI:10.1109/IEDM.2017.8268350

Suhui Lee, Di Geng, Ling Li, Ming Liu, Jin Jang

{"title":"具有拆分有源半导体和源极/漏极的高鲁棒性氧化薄膜晶体管","authors":"Suhui Lee, Di Geng, Ling Li, Ming Liu, Jin Jang","doi":"10.1109/IEDM.2017.8268350","DOIUrl":null,"url":null,"abstract":"We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.","PeriodicalId":412333,"journal":{"name":"2017 IEEE International Electron Devices Meeting (IEDM)","volume":"385 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes\",\"authors\":\"Suhui Lee, Di Geng, Ling Li, Ming Liu, Jin Jang\",\"doi\":\"10.1109/IEDM.2017.8268350\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.\",\"PeriodicalId\":412333,\"journal\":{\"name\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"385 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2017.8268350\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2017.8268350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

我们报告了在塑料衬底上使用分裂活性氧化物半导体和源极/漏极的极其稳定和高性能的a-IGZO TFT腐蚀阻蚀剂(E/S)。a-IGZO TFTs具有超过70cm2/Vs的高迁移率，并且在正偏置应力和机械应力下非常稳定。因此，该技术可用于制造高分辨率柔性AMOLED显示器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Highly robust oxide thin film transistors with split active semiconductor and source/drain electrodes

We report extremely stable and high performance etch-stopper (E/S) a-IGZO TFT on plastic substrate by using split active oxide semiconductor and source/drain electrodes. The a-IGZO TFTs exhibit high mobility over 70cm2/Vs and extremely stable under positive bias stress and mechanical stress. Therefore, this technology can be used for the manufacturing of high resolution flexible AMOLED displays.

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2017 IEEE International Electron Devices Meeting (IEDM)

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