k -功率图在实验IVC处理中的优势

Sergey Filippov, A. G. Kolosko, E. O. Popov
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引用次数: 0

摘要

在考虑发射极尖端形状的情况下,提出了一个描述发射面积随外加电压的函数依赖关系的通用公式。利用新的半对数坐标“${}^{\prime\prime}\mathrm{k}$ -功率图”进行电流-电压特性(IVC)处理的优点。对大面积纳米复合材料发射极发射图后处理方法得到的局部IVCs进行了处理。得到了局部排放点的“顶点半径/有效高度”图。单个发射中心的有效高度随着电流负荷的减小而变化,这与它们的功函数的增加有关。
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Advantages of K-Power Plot for Experimental IVC Processing
A universal formula that describes the functional dependence of the emission area on the applied voltage, taking into account the shape of the emitter tip is proposed. The advantage of using the new semi-logarithmic coordinates ${}^{\prime\prime}\mathrm{k}$ -power plot” for the current-voltage characteristic (IVC) processing is shown. The processing of local IVCs obtained by the method of post-processing of the emission patterns of a large-area nanocomposite emitter has been processed. The diagram “apex radius / effective height” for local emission sites has been obtained. A shift in the effective height of individual emission centers with a reduced current load, which is associated with an increase in their work function, has been found.
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