用于空间应用的柔性衬底a-Si:H TFTs

Lisong Zhou, T. Jackson, E. Brandon, W. West
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引用次数: 9

摘要

我们在Kapton/sup (R)/聚酰亚胺柔性衬底上制备了氢化非晶硅(a-Si:H) tft,并表征了它们对类似展开的机械应力和辐射暴露的响应。为了保持基板的平整度并在制造过程中提供更好的热传递,我们使用了压敏硅凝胶粘合层将Kapton/sup (R)/基板安装到玻璃载体上。测试结果,在本文中提出,是令人鼓舞的空间应用的a-Si:H tft聚合物衬底。即使经过1 Mrad的快速电子辐照,器件功能仍保持不变,并且通过低温热退火消除了辐照引起的器件变化。虽然一些tft被衬底应力破坏,但大多数存活下来,只有很小的变化,这表明在器件设计和放置方面的谨慎可能会减少或消除这个问题。
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Flexible substrate a-Si:H TFTs for space applications
We have fabricated hydrogenated amorphous silicon (a-Si:H) TFTs on Kapton/sup (R)/ polyimide flexible substrates and characterized their response to deployment-like mechanical stresses and to radiation exposure. To maintain substrate flatness and provide improved thermal transfer during fabrication, we used a pressure-sensitive silicone gel adhesive layer to mount Kapton/sup (R)/ substrates onto glass carriers. The test results, presented in this paper, are encouraging for space use of a-Si:H TFTs on polymeric substrates. Device function was retained even after 1 Mrad fast electron irradiation, and irradiation-induced device changes were removed by low-temperature thermal annealing. Although some TFTs were destroyed by substrate stressing, the majority survived with only small changes, suggesting that care in device design and placement may reduce or eliminate this problem.
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