Amit Jha, Jieyin Zheng, C. Masse, P. Hurwitz, S. Chaudhry
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引用次数: 2
摘要
采用不同通道长度的多门控晶体管核(MGTR)，在130nm SOI CMOS中演示了5.4GHz LNA。使用1V电源，消耗3mA电流，LNA具有10.8dB增益，0.65dB NF, 6dBm IIP3。LNA在5-6GHz的输入和输出范围内匹配，采用高Q片上电感，采用高电阻衬底。与使用MGTR和其他线性化技术的LNA相比，LNA实现了最先进的NF，以及已发表的LNA中最高的优点，FOM2和FOM3。
A 5.4GHz 0.65dB NF 6dBm IIP3 MGTR LNA in 130nm SOI CMOS
Using a multiple gated transistor core (MGTR) with different channel lengths, a 5.4GHz LNA in 130nm SOI CMOS is demonstrated. Using a 1V supply and consuming 3mA current, LNA has 10.8dB gain, 0.65dB NF, 6dBm IIP3. The LNA is matched at input and output from 5-6GHz using high Q on-chip inductors in high resistive substrate. The LNA achieves state-of-the-art NF compared to LNAs employing MGTR and other linearization techniques, as well as the highest figure of merits, FOM2 & FOM3 in published LNAs.
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