三维耦合电热FinFET模拟,包括翅片形状对导热系数的依赖性

L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov
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引用次数: 23

摘要

基于热流、泊松和电流连续性方程的耦合解,在“原子”模拟器GARAND中开发并实现了热模拟模块,以研究自加热对FinFET直流工作的影响。本文提出了一种针对非场效应管的耦合电热模拟方法。提出了一个新的近似公式,该公式考虑了翅片高度和翅片宽度,并且与位置和温度有关。对SOI FinFET和本体FinFET的仿真结果进行了比较和分析。
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3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity
A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.
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