先进CMOS图像传感器中重离子与激光单事件效应的相似性

2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2019-09-01 DOI:10.1109/radecs47380.2019.9745673

C. Virmontois, V. Lalucaa, J. Belloir, G. Bascoul, A. Bardoux

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引用次数: 2

摘要

本文重点讨论了采用上一代成像工艺评价正面和背面照明CMOS图像传感器单事件效应的重离子测试和激光测试的相似性。结果突出了这些设备对单个事件的敏感性，组合结果提供了与布局体系结构敏感性相关的信息。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single Event Effect Similarities between Heavy Ions and LASER tests in Advanced CMOS Image Sensors

This paper focuses on the similarities between heavy ions and LASER tests to evaluate single event effect in front-side and back-side illuminated CMOS image sensors using last generation imaging process. The results highlight the sensitivity to these devices to single event and combined results provide information related to layout architecture sensitivity.

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2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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