基于波特性研究的GaAs MESFET优化及新器件应用

1985 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1985-06-04 DOI:10.1109/MWSYM.1985.1131938

K. Fricke, H. Hartnagel

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引用次数: 6

摘要

本文的研究结果是用专门制造的mesfet对FET结构的波动特性进行实验研究得到的。讨论了将这些信息用于MESFET结构的优化和新器件的开发。这将证明，一个显着的改进FET增益是可获得的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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GaAs MESFET Optimization and New Device Applications Based on Wave Property Studies

The results to be presented are obtained by an experimental investigation of the wave properties on FET structures using especially fabricated MESFETs. The use of this information for an optimization of MESFET structures and for a development of new devices is discussed. It will be demonstrated that a significant improvement of the FET gain is obtainable.

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1985 IEEE MTT-S International Microwave Symposium Digest

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