{"title":"声子散射在硅量子点中的电子弛豫","authors":"M. Dur, A. Gunther, D. Vasileska, S. Goodnick","doi":"10.1109/IWCE.1998.742704","DOIUrl":null,"url":null,"abstract":"Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO/sub 2/ interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.","PeriodicalId":357304,"journal":{"name":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electron relaxation in silicon quantum dots by acoustic phonon scattering\",\"authors\":\"M. Dur, A. Gunther, D. Vasileska, S. Goodnick\",\"doi\":\"10.1109/IWCE.1998.742704\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO/sub 2/ interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.\",\"PeriodicalId\":357304,\"journal\":{\"name\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.1998.742704\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.1998.742704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electron relaxation in silicon quantum dots by acoustic phonon scattering
Acoustic phonon scattering of electrons in fully quantized systems based on n-type inversion layers on a [100] surface of p-type Si is studied theoretically. The confining potential normal to the Si/SiO/sub 2/ interface is modeled by a triangular quantum well. For the confinement in the lateral directions we assume a parabolic potential. The calculations reveal that the anisotropic electron-phonon interaction strongly affects the scattering rate. The calculated transition rate of electrons from the first excited to the ground state shows a strong dependence on spatial confinement and lattice temperature.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
