120/spl度/C脉冲操作从1.55 /spl μ m垂直腔激光器

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI:10.1109/LEOSST.1997.619097

N. Margalit, Yiljen Chiu, E. Hegblom, P. Abraham, A. Black, J. Wesselmann, J. Bowers, E. Hu, K. Streubel

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引用次数: 0

摘要

只提供摘要形式。在本次演讲中，我们将重点介绍InP-InGaAsP MQW垂直腔激光器的设计，以实现高温工作。我们得出结论，这种设计的关键是减少往返腔损失。我们展示了在我们的工作中使用的低损耗双熔侧氧化结构。这种结构允许使用基于砷化镓的反射镜实现高镜面反射率，从而降低了阈值处的必要增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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120/spl deg/C pulsed operation from a 1.55 /spl mu/m vertical-cavity laser

Summary form only given. In this presentation we will focus on the design of InP-InGaAsP MQW vertical cavity lasers to achieve high temperature operation. We have concluded that the key to such design is the reduction of round trip cavity loss. We show the low loss double-fused laterally oxidized structure used in our work. This structure allows for high mirror reflectivities using GaAs based mirrors reducing the necessary gain at threshold.

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来源期刊

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application

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