{"title":"化学合成钙钛矿BiFeO3-PbTiO3薄膜的铁电性能","authors":"A. Iwata, W. Sakamoto, T. Yogo","doi":"10.1109/ISAF.2007.4393286","DOIUrl":null,"url":null,"abstract":"In this study, we investigated the solid solution of BiFeO<sub>3</sub>-PbTiO<sub>3</sub> (BF-PT) system to improve the structural stability of perovskite phase and to enhance of several properties by using a morphotropic phase boundary (MPB) composition. Perovskite BF-PT single phase thin films were successfully fabricated though the formation of solid solution with PbTiO<sub>3</sub>. Although the electrical resistivity of BF-PT thin films was not sufficiently high at around room temperature, the large ferroelectricity was observed at low temperatures. The 0.7BiFeO<sub>3</sub>-0.3PbTiO<sub>3</sub> thin films exhibited the P<sub>r</sub> value of 60 muC/cm<sup>2</sup> at -190degC.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Ferroelectric Properties of Chemically Synthesized Perovskite BiFeO3-PbTiO3 Thin Films\",\"authors\":\"A. Iwata, W. Sakamoto, T. Yogo\",\"doi\":\"10.1109/ISAF.2007.4393286\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we investigated the solid solution of BiFeO<sub>3</sub>-PbTiO<sub>3</sub> (BF-PT) system to improve the structural stability of perovskite phase and to enhance of several properties by using a morphotropic phase boundary (MPB) composition. Perovskite BF-PT single phase thin films were successfully fabricated though the formation of solid solution with PbTiO<sub>3</sub>. Although the electrical resistivity of BF-PT thin films was not sufficiently high at around room temperature, the large ferroelectricity was observed at low temperatures. The 0.7BiFeO<sub>3</sub>-0.3PbTiO<sub>3</sub> thin films exhibited the P<sub>r</sub> value of 60 muC/cm<sup>2</sup> at -190degC.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393286\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393286","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ferroelectric Properties of Chemically Synthesized Perovskite BiFeO3-PbTiO3 Thin Films
In this study, we investigated the solid solution of BiFeO3-PbTiO3 (BF-PT) system to improve the structural stability of perovskite phase and to enhance of several properties by using a morphotropic phase boundary (MPB) composition. Perovskite BF-PT single phase thin films were successfully fabricated though the formation of solid solution with PbTiO3. Although the electrical resistivity of BF-PT thin films was not sufficiently high at around room temperature, the large ferroelectricity was observed at low temperatures. The 0.7BiFeO3-0.3PbTiO3 thin films exhibited the Pr value of 60 muC/cm2 at -190degC.
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