{"title":"优化5nm技术的EBAC / EBIRCH分析","authors":"A. Rummel, Greg M. Johnson","doi":"10.1109/IPFA55383.2022.9915709","DOIUrl":null,"url":null,"abstract":"An intentionally overstressed fin defect was created in 5 nm technology. EBIC analysis with 0.5 kV electron beam stimulation enabled early detection of the defect during overstress experiments. EBIRCH analysis, again at 0.5 kV was able to isolate the exact spot of the fail in a multi-fin device. Additional EBIC scans at various kVs were also able to isolate the failing fin, located close to the EBIRCH spot, and provided insights on how to use Monte Carlo scattering models to predict the optimal beam energy to find defects via EBIC. This approach could be applied to fails in 5 nm or systems with delicate structures.","PeriodicalId":378702,"journal":{"name":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimizing EBAC / EBIRCH analysis in 5 nm technology\",\"authors\":\"A. Rummel, Greg M. Johnson\",\"doi\":\"10.1109/IPFA55383.2022.9915709\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An intentionally overstressed fin defect was created in 5 nm technology. EBIC analysis with 0.5 kV electron beam stimulation enabled early detection of the defect during overstress experiments. EBIRCH analysis, again at 0.5 kV was able to isolate the exact spot of the fail in a multi-fin device. Additional EBIC scans at various kVs were also able to isolate the failing fin, located close to the EBIRCH spot, and provided insights on how to use Monte Carlo scattering models to predict the optimal beam energy to find defects via EBIC. This approach could be applied to fails in 5 nm or systems with delicate structures.\",\"PeriodicalId\":378702,\"journal\":{\"name\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA55383.2022.9915709\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA55383.2022.9915709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimizing EBAC / EBIRCH analysis in 5 nm technology
An intentionally overstressed fin defect was created in 5 nm technology. EBIC analysis with 0.5 kV electron beam stimulation enabled early detection of the defect during overstress experiments. EBIRCH analysis, again at 0.5 kV was able to isolate the exact spot of the fail in a multi-fin device. Additional EBIC scans at various kVs were also able to isolate the failing fin, located close to the EBIRCH spot, and provided insights on how to use Monte Carlo scattering models to predict the optimal beam energy to find defects via EBIC. This approach could be applied to fails in 5 nm or systems with delicate structures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
