片上电感的边界总线延迟和噪声效应

M. Linderman, D. Harris, D. Diaz
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引用次数: 2

摘要

片上电感依赖于电流返回路径,在一般情况下,提取和建模的计算成本是不合理的。一个实际的解决方案是提供一个定义良好的供电网络,使电流返回路径更可预测。本文建立了母线时延和噪声随母线物理尺寸和开关参数的函数模型。并应用该模型对180,130和100nm制程的片上总线的延迟和噪声的感应效应进行了边界计算。如果一条电源线或地线与每四条母线交叉,RLC噪声和延迟比RC模型预测的要大不超过7%。设计人员可以将这种延迟和噪声作为对所有母线的小惩罚,而不必在每个母线上单独提取和建模电感。
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Bounding bus delay and noise effects of on-chip inductance
On-chip inductance depends on current return paths and is unreasonably computationally expensive to extract and model in the general case. A practical solution is to provide a well-defined power supply network so the current return paths are more predictable. This paper develops a model of bus delay and noise as a function of the physical dimensions of busses and the switching parameters. It applies this model to develop bounds on the inductive effects on delay and noise for on-chip busses in 180, 130 and 100 nm processes. If one power or ground line is interdigitated with every four bus lines, the RLC noise and delay are no more than 7% greater than RC models would predict. Designers may treat this delay and noise as small penalties for all busses rather than having to individually extract and model inductance on each bus.
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Presentation of a new time domain simulation tool and application to the analysis of advanced interconnect performance dependence on design and process parameters Sensitivity analysis of generic on-chip /spl Delta/I-noise simulation methodology A frequency domain approach for efficient model reduction of mixed VLSI circuits Non-uniform grid (NG) algorithm for fast capacitance extraction Dampening high frequency noise in high performance microprocessor packaging
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