Naoki Takayama, Kota Matsushita, Shogo Ito, Ning Li, K. Okada, A. Matsuzawa
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引用次数: 2
摘要
本文提出了一种采用65纳米CMOS技术的60 GHz直接转换发射机。功率放大器由4级晶体管组成。考虑物理长度，将解耦电容作为传输线建立电路模型。测量结果显示，在58 ~ 65ghz频段，转换增益大于9.6dB，在60 GHz LO频率和1 dB LO功率下，1db压缩点为1.6 dBm。
A 60GHz direct-conversion transmitter in 65nm CMOS technology
This paper presents a 60 GHz direct-conversion transmitter in 65 nm CMOS technology. The power amplifier consists of 4-stage transistors. The circuit model of de-coupling capacitor is built as a transmission line to consider the physical length. In the measurement results, the conversion gain is above 9.6dB at 58–65GHz band, and the 1 dB compression point is 1.6 dBm with 60 GHz LO frequency and 1 dB LO power.
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