{"title":"具有绝缘Langmuir-Blodgett薄膜的MIS二极管的电学特性","authors":"F. Kaneko, M. Shibata, S. Kobayashi","doi":"10.1109/CEIDP.1988.26336","DOIUrl":null,"url":null,"abstract":"Electrical properties are investigated for metal-insulator-semiconductor diodes having Langmuir-Blodgett polydiacetylene (LB PDA) thin films. Capacitance-voltage characteristics measured for the Al-LB PDA-Si (MIS) diodes show reasonable capacitances for the accumulation. The C-V curves show hysteresis, and flatband voltage shifts are observed under the application of bias voltages. These results show charge injection from Si in the MIS diodes. Thermally stimulated currents (TSCs) are measured for Al-LB PDA-Al metal-insulator-metal structures. TSC peaks caused by dipole polarization and charge injection are observed in the low- and high-temperature regions respectively.<<ETX>>","PeriodicalId":149735,"journal":{"name":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Electrical properties of MIS diodes with insulating Langmuir-Blodgett thin films\",\"authors\":\"F. Kaneko, M. Shibata, S. Kobayashi\",\"doi\":\"10.1109/CEIDP.1988.26336\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electrical properties are investigated for metal-insulator-semiconductor diodes having Langmuir-Blodgett polydiacetylene (LB PDA) thin films. Capacitance-voltage characteristics measured for the Al-LB PDA-Si (MIS) diodes show reasonable capacitances for the accumulation. The C-V curves show hysteresis, and flatband voltage shifts are observed under the application of bias voltages. These results show charge injection from Si in the MIS diodes. Thermally stimulated currents (TSCs) are measured for Al-LB PDA-Al metal-insulator-metal structures. TSC peaks caused by dipole polarization and charge injection are observed in the low- and high-temperature regions respectively.<<ETX>>\",\"PeriodicalId\":149735,\"journal\":{\"name\":\"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CEIDP.1988.26336\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988. Annual Report., Conference on Electrical Insulation and Dielectric Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.1988.26336","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrical properties of MIS diodes with insulating Langmuir-Blodgett thin films
Electrical properties are investigated for metal-insulator-semiconductor diodes having Langmuir-Blodgett polydiacetylene (LB PDA) thin films. Capacitance-voltage characteristics measured for the Al-LB PDA-Si (MIS) diodes show reasonable capacitances for the accumulation. The C-V curves show hysteresis, and flatband voltage shifts are observed under the application of bias voltages. These results show charge injection from Si in the MIS diodes. Thermally stimulated currents (TSCs) are measured for Al-LB PDA-Al metal-insulator-metal structures. TSC peaks caused by dipole polarization and charge injection are observed in the low- and high-temperature regions respectively.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
