{"title":"一种分析异质结二极管模型，包括耗尽层内的电子输运和击穿","authors":"M. Horák","doi":"10.1109/ASDAM.2002.1088510","DOIUrl":null,"url":null,"abstract":"An analytical model that describes the Np/sup +/-heterojunction diode forward and reverse current is presented. The following physical processes at the heterojunction are considered: drift and diffusion with field dependent mobility, recombination, band-to-band tunneling, avalanche multiplication, thermionic-field emission. The resulting formula describes the diode current in the whole extent from forward bias through reverse bias up to breakdown.","PeriodicalId":179900,"journal":{"name":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An analytical heterojunction diode model including the electron transport inside the depletion layer and the breakdown\",\"authors\":\"M. Horák\",\"doi\":\"10.1109/ASDAM.2002.1088510\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical model that describes the Np/sup +/-heterojunction diode forward and reverse current is presented. The following physical processes at the heterojunction are considered: drift and diffusion with field dependent mobility, recombination, band-to-band tunneling, avalanche multiplication, thermionic-field emission. The resulting formula describes the diode current in the whole extent from forward bias through reverse bias up to breakdown.\",\"PeriodicalId\":179900,\"journal\":{\"name\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2002.1088510\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Conference on Advanced Semiconductor Devices and Microsystem","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2002.1088510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An analytical heterojunction diode model including the electron transport inside the depletion layer and the breakdown
An analytical model that describes the Np/sup +/-heterojunction diode forward and reverse current is presented. The following physical processes at the heterojunction are considered: drift and diffusion with field dependent mobility, recombination, band-to-band tunneling, avalanche multiplication, thermionic-field emission. The resulting formula describes the diode current in the whole extent from forward bias through reverse bias up to breakdown.
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