Zhongda Li, J. Waldron, R. Dayal, L. Parsa, M. Hella, T. Chow
{"title":"用于功率开关应用的硅衬底上的高压正常关断GaN mosc - hemt","authors":"Zhongda Li, J. Waldron, R. Dayal, L. Parsa, M. Hella, T. Chow","doi":"10.1109/ISPSD.2012.6229019","DOIUrl":null,"url":null,"abstract":"We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications\",\"authors\":\"Zhongda Li, J. Waldron, R. Dayal, L. Parsa, M. Hella, T. Chow\",\"doi\":\"10.1109/ISPSD.2012.6229019\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.\",\"PeriodicalId\":371298,\"journal\":{\"name\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2012.6229019\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229019","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High voltage normally-off GaN MOSC-HEMTs on silicon substrates for power switching applications
We report our experimental results on high voltage normally-off GaN MOS channel HEMTs (MOSC-HEMT) on silicon substrates with best specific on-resistance (Ron,sp) of 4 mΩ-cm2 and breakdown voltage (BV) of 840V. The switching performance of the device was evaluated by SPICE simulations of a buck-boost converter and showed a system efficiency of 10% higher than that using a commercial GaN HEMT. A bidirectional switch consisted two GaN MOSC-HEMTs were also demonstrated.
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