{"title":"磁晶体管三维场传感","authors":"S. Lozanova, A. Ivanov, C. Roumenin","doi":"10.1109/ET.2019.8878505","DOIUrl":null,"url":null,"abstract":"An original p+-n -p+ magnetotransistors for subsequent measurement of three orthogonal magnetic components using a common sensor region is presented. Collector coupling-arrangements are formed for obtaining the information about the full magnetic-field vector. The operation is determined by curvilinear trajectory of holes and Lorentz force deflection on them. The channel outputs are linear and magnetosensitivities reaches Sx≈25µA/T, Sy≈150µA/T and Sz≈345µA/T for device with accelerating field in the base. The cross-talk reaches about 3.0 % at inductionB ≤ 1T.","PeriodicalId":306452,"journal":{"name":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","volume":"1122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Three-dimensional Field Sensing with Magnetotransistors\",\"authors\":\"S. Lozanova, A. Ivanov, C. Roumenin\",\"doi\":\"10.1109/ET.2019.8878505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An original p+-n -p+ magnetotransistors for subsequent measurement of three orthogonal magnetic components using a common sensor region is presented. Collector coupling-arrangements are formed for obtaining the information about the full magnetic-field vector. The operation is determined by curvilinear trajectory of holes and Lorentz force deflection on them. The channel outputs are linear and magnetosensitivities reaches Sx≈25µA/T, Sy≈150µA/T and Sz≈345µA/T for device with accelerating field in the base. The cross-talk reaches about 3.0 % at inductionB ≤ 1T.\",\"PeriodicalId\":306452,\"journal\":{\"name\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"volume\":\"1122 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ET.2019.8878505\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2019.8878505","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Three-dimensional Field Sensing with Magnetotransistors
An original p+-n -p+ magnetotransistors for subsequent measurement of three orthogonal magnetic components using a common sensor region is presented. Collector coupling-arrangements are formed for obtaining the information about the full magnetic-field vector. The operation is determined by curvilinear trajectory of holes and Lorentz force deflection on them. The channel outputs are linear and magnetosensitivities reaches Sx≈25µA/T, Sy≈150µA/T and Sz≈345µA/T for device with accelerating field in the base. The cross-talk reaches about 3.0 % at inductionB ≤ 1T.
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