脉冲快速热退火技术在MILC多晶硅薄膜上制备TFT

C. Y. Yuen, M. Poon, M. Chan, W. Y. Chan, M. Qin
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引用次数: 0

摘要

采用金属诱导横向结晶和脉冲快速热退火的方法在多晶硅上制备了薄膜晶体管。结果表明,在800/spl℃温度下进行10次1秒的脉冲热退火处理,晶粒尺寸增大,所制晶体管的性能比未进行快速退火处理的晶体管提高了近一倍。该方法在低温玻璃基板上制作薄膜晶体管以及在太阳能电池和LCD上的应用具有很大的潜力。
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TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealing
Thin film transistors have been fabricated on the polysilicon from the process of metal induced lateral crystallization and pulsed rapid thermal annealing. The result shows that process of 10 cycles of 1 second at 800/spl deg/C thermal pulse annealing has enhanced the grain sizes and the transistors fabricated have improvement which almost doubled the performance of those without the rapid thermal annealing. This method has high potential for use in the fabrication of thin film transistors on low temperature glass substrate and application in solar cell and LCD.
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