GaN/金刚石键合界面的制备与表征

2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2021-10-05 DOI:10.1109/LTB-3D53950.2021.9598383

A. Kobayashi, Y. Shimizu, Y. Ohno, S. W. Kim, K. Koyama, M. Kasu, Y. Nagai, N. Shigekawa, J. Liang

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引用次数: 0

摘要

采用表面活化键合方法成功地制备了金刚石与氮化镓的直接键合。金刚石与氮化镓的接触面积达到80%。在原位退火条件下，利用透射电镜研究了退火温度对键合界面结构性能的影响。

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Fabrication and Characterization of GaN/Diamond bonding interface

Direct bonding of diamond and GaN is successfully fabricated by surface activated bonding method. An 80% contact area of diamond and GaN is obtained. The effect of annealing temperature on the structure properties of the bonding interface is investigated under in-situ annealing in a transmission electron microscope (TEM).

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2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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