V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva
{"title":"多孔硅基异质结构:形成、性质及应用","authors":"V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva","doi":"10.1109/SMICND.1996.557349","DOIUrl":null,"url":null,"abstract":"The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Porous silicon based heterostructures: formation, properties, and application\",\"authors\":\"V. Bondarenko, A. Bondarenko, L.N. Dolgyi, A. Dorofeev, N. Kazuchits, V. Levchenko, N.N. Vorozov, S.A. Volchek, G.N. Troyanova, V. Yakovtseva\",\"doi\":\"10.1109/SMICND.1996.557349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.\",\"PeriodicalId\":266178,\"journal\":{\"name\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-10-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.1996.557349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Porous silicon based heterostructures: formation, properties, and application
The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation of different heterostuctures: GaAs/PS/Si, C/PS/Si, PbS/PS/Si, PS:Er/Si, Si/SiO/sub 2//Si. The heterostructures were used for CMOS/SOI IC's, light emitting and waveguiding components. PS was shown to provide integration of opto- and microelectronic components on Si wafer.
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