{"title":"带有大面积集成PIN光电二极管的220mhz光接收器","authors":"M. Fortsch, H. Zimmermann, H. Pless","doi":"10.1109/ICSENS.2003.1279095","DOIUrl":null,"url":null,"abstract":"We propose a PIN photodiode combining high responsivity, fast drift times and low junction capacitance in BiCMOS technology. This fast PIN photodiode allows the design of fast optoelectronic integrated circuits (OEIC) for many advanced applications in optical sensing, optical data transmission and optical storage systems. Because of the low capacitance of 0.0105fF/ /spl mu/m/sup 2/ it is possible to design fast OEICs with large-area photodetectors. The proposed optical receiver applying a PIN photodiode with a diameter of 500 /spl mu/m and a capacitance of only 2pF attains a -3dB bandwidth of 220MHz, which corresponds to a maximum data rate of 300Mbit/s.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"352 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"220 MHz optical receiver with large-area integrated PIN photodiode\",\"authors\":\"M. Fortsch, H. Zimmermann, H. Pless\",\"doi\":\"10.1109/ICSENS.2003.1279095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a PIN photodiode combining high responsivity, fast drift times and low junction capacitance in BiCMOS technology. This fast PIN photodiode allows the design of fast optoelectronic integrated circuits (OEIC) for many advanced applications in optical sensing, optical data transmission and optical storage systems. Because of the low capacitance of 0.0105fF/ /spl mu/m/sup 2/ it is possible to design fast OEICs with large-area photodetectors. The proposed optical receiver applying a PIN photodiode with a diameter of 500 /spl mu/m and a capacitance of only 2pF attains a -3dB bandwidth of 220MHz, which corresponds to a maximum data rate of 300Mbit/s.\",\"PeriodicalId\":369277,\"journal\":{\"name\":\"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)\",\"volume\":\"352 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENS.2003.1279095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2003.1279095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
220 MHz optical receiver with large-area integrated PIN photodiode
We propose a PIN photodiode combining high responsivity, fast drift times and low junction capacitance in BiCMOS technology. This fast PIN photodiode allows the design of fast optoelectronic integrated circuits (OEIC) for many advanced applications in optical sensing, optical data transmission and optical storage systems. Because of the low capacitance of 0.0105fF/ /spl mu/m/sup 2/ it is possible to design fast OEICs with large-area photodetectors. The proposed optical receiver applying a PIN photodiode with a diameter of 500 /spl mu/m and a capacitance of only 2pF attains a -3dB bandwidth of 220MHz, which corresponds to a maximum data rate of 300Mbit/s.
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