{"title":"基于中心电位的TM-CGAA MOSFET阈值电压建模","authors":"Jagamohan Sahoo, R. Mahapatra","doi":"10.1109/MICROCOM.2016.7522548","DOIUrl":null,"url":null,"abstract":"Due to scaling of MOSFET, in this paper we have considered a triple material cylindrical gate all around(TM-CGAA) to study the SCEs and DIBL. An analytical threshold voltage model has also been reported. Center potential based modeling is carried out instead of surface potential for better accuracy.","PeriodicalId":118902,"journal":{"name":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Center potential based threshold voltage modelling of TM-CGAA MOSFET\",\"authors\":\"Jagamohan Sahoo, R. Mahapatra\",\"doi\":\"10.1109/MICROCOM.2016.7522548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to scaling of MOSFET, in this paper we have considered a triple material cylindrical gate all around(TM-CGAA) to study the SCEs and DIBL. An analytical threshold voltage model has also been reported. Center potential based modeling is carried out instead of surface potential for better accuracy.\",\"PeriodicalId\":118902,\"journal\":{\"name\":\"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MICROCOM.2016.7522548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Microelectronics, Computing and Communications (MicroCom)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MICROCOM.2016.7522548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Center potential based threshold voltage modelling of TM-CGAA MOSFET
Due to scaling of MOSFET, in this paper we have considered a triple material cylindrical gate all around(TM-CGAA) to study the SCEs and DIBL. An analytical threshold voltage model has also been reported. Center potential based modeling is carried out instead of surface potential for better accuracy.
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