Yang Li, G. Ng, S. Arulkumaran, C. M. Kumar, K. Ang, Zhi Hong Liu
{"title":"具有溅射TiN栅极的硅基AlGaN/GaN高电子迁移率晶体管","authors":"Yang Li, G. Ng, S. Arulkumaran, C. M. Kumar, K. Ang, Zhi Hong Liu","doi":"10.1002/pssa.201600555","DOIUrl":null,"url":null,"abstract":"Summary form only given. We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I-V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I-V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate\",\"authors\":\"Yang Li, G. Ng, S. Arulkumaran, C. M. Kumar, K. Ang, Zhi Hong Liu\",\"doi\":\"10.1002/pssa.201600555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I-V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I-V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.201600555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssa.201600555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate
Summary form only given. We have investigated the Schottky barrier diode (SBD) and device (DC and pulsed I-V) characteristics of AlGaN/GaN HEMTs fabricated with sputtered TiN Schottky gate. The measured Schottky barrier height (SBH) of TiN on Al0.26Ga0.74N/GaN HEMT structure are 1.126 and 1.105 eV by I-V and I-V-T measurements, respectively. No hysteresis is observed in between forward and reverse C-V sweeps of TiN SBD. Compared to Ni/Au Schottky gate, the HEMT with TiN gate shows comparable DC output and transfer characteristics, improved OFF-state breakdown voltage (VBRoff) with very small drain current collapse, indicating the feasibility of using sputtered TiN for the fabrication of CMOS-compatible AlGaN/GaN HEMTs.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
