STEM EBIC:迈向高分辨率预测失效分析

W. Hubbard
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引用次数: 0

摘要

能够辨别样品中原子的组成和位置,使TEM成为微电子元件最强大的表征工具之一。然而,对于许多装置来说,正常操作背后的动力学并不会使原子发生位移。相反,器件功能是由电子和热过程介导的,对物理结构几乎没有影响,因此需要额外的工具来确定故障原因。在本文中,作者提出的结果表明,采用新的SEEBIC模式的STEM EBIC可以提供电子对比,补充STEM成像的基于物理的对比。通过识别故障风险较高的设备特征,这两种方法可能为预测故障分析开辟一条道路。
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STEM EBIC: Toward Predictive Failure Analysis at High Resolution
The ability to discern the composition and placement of atoms in a sample makes TEM one of the most powerful characterization tools for microelectronic components. For many devices, however, the dynamics underlying normal operation do not displace atoms. Device function is, instead, mediated by electronic and thermal processes that have little effect on physical structure, necessitating additional tools to determine the causes of failure. In this article, the author presents results indicating that STEM EBIC, with the new SEEBIC mode, can provide electronic contrast that complements the physical-based contrast of STEM imaging. By identifying device features at higher risk of failure, the two methods may open a path to predictive failure analysis.
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