{"title":"将非线性电阻器转换为忆阻器的变换器","authors":"D. Biolek, J. Bajer, V. Biolková, Z. Kolka","doi":"10.1109/ECCTD.2011.6043393","DOIUrl":null,"url":null,"abstract":"A method of analogue emulation of the memristor with its prescribed charge (q<inf>M</inf>) - flux (ϕ<inf>M</inf>) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (i<inf>R</inf>) - voltage (v<inf>R</inf>) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations q<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, ϕ<inf>M</inf> =k<inf>x</inf>v<inf>R</inf>, or ϕ<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, q<inf>M</inf>=k<inf>x</inf>v<inf>R</inf>, where k<inf>x</inf>, k<inf>y</inf> are real numbers fulfilling the condition k<inf>x</inf>k<inf>y</inf>>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"Mutators for transforming nonlinear resistor into memristor\",\"authors\":\"D. Biolek, J. Bajer, V. Biolková, Z. Kolka\",\"doi\":\"10.1109/ECCTD.2011.6043393\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A method of analogue emulation of the memristor with its prescribed charge (q<inf>M</inf>) - flux (ϕ<inf>M</inf>) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (i<inf>R</inf>) - voltage (v<inf>R</inf>) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations q<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, ϕ<inf>M</inf> =k<inf>x</inf>v<inf>R</inf>, or ϕ<inf>M</inf>=k<inf>y</inf>i<inf>R</inf>, q<inf>M</inf>=k<inf>x</inf>v<inf>R</inf>, where k<inf>x</inf>, k<inf>y</inf> are real numbers fulfilling the condition k<inf>x</inf>k<inf>y</inf>>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.\",\"PeriodicalId\":126960,\"journal\":{\"name\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2011.6043393\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043393","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 41
摘要
提出了一种具有规定电荷(qM) -磁通(ϕM)本构关系的忆阻器的模拟仿真方法。该忆阻器是通过一个具有非线性电流(iR) -电压(vR)关系的电阻器和一个突变器来仿真的。变换器的目的是根据公式qM=kyiR, m =kxvR，或m =kyiR, qM=kxvR，其中kx, ky为满足条件kxky>0的实数，将电阻器的电流-电压特性相似地转换为忆阻器的本构关系。结果表明，这些突变体有8个版本。选取其中一个进行实验验证。
Mutators for transforming nonlinear resistor into memristor
A method of analogue emulation of the memristor with its prescribed charge (qM) - flux (ϕM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR) - voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, ϕM =kxvR, or ϕM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.
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