一种k栅极砷化镓栅极阵列

1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers Pub Date : 1900-01-01 DOI:10.1109/isscc.1984.1156640

Y. Ikawa, N. Toyoda, M. Mochisuki, T. Terada, K. Kanazawa, M. Hirose, T. Mizoguchi, A. Hojo

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引用次数: 18

摘要

将介绍一种连接为6 × 6b并联乘法器的1050门GaAs门阵列，其倍增时间为10.6ns，功耗为350mW。

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A 1K-gate GaAs gate array

A 1050-gate GaAs gate array connected as a 6 × 6b parallel multiplier, which exhibits a multiplication time of 10.6ns and 350mW power dissipation, will be covered.

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1984 IEEE International Solid-State Circuits Conference. Digest of Technical Papers

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