基于三角积分调制器可变分辨率激活的 SRAM 内存计算宏程序

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2023-10-24 DOI:10.1109/LSSC.2023.3327213
Vasundhara Damodaran;Ziyu Liu;Jian Meng;Jae-Sun Seo;Arindam Sanyal
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引用次数: 0

摘要

这封信介绍了一种基于 SRAM 的内存计算 (CIM) 宏,它使用 1 位 $\Delta \Sigma $ 调制器将输入和输出激活转换为二进制脉冲波形。与电流域 SRAM CIM 宏相比,SRAM 宏使用开关电容器进行矢量矩阵乘法,加上二进制输入激活,提高了线性度,并允许重新配置激活分辨率。所提出的宏采用 65 纳米制造,并在 MNIST 和 CIFAR-10 数据集上进行了基准测试,准确率分别为 98.67% 和 89.85%,能效范围为 15.4-138.6 TOPS/W。
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SRAM In-Memory Computing Macro With Delta-Sigma Modulator-Based Variable-Resolution Activation
This letter presents an SRAM-based compute-in-memory (CIM) macro that uses 1-bit $\Delta \Sigma $ modulators to convert input and output activations to binary pulse waveform. The SRAM macro uses switched-capacitors for vector matrix multiplications and together with binary input activation improves linearity compared to current-domain SRAM CIM macros and allows reconfigurable activation resolution. The proposed macro is fabricated in 65 nm and benchmarked on MNIST and CIFAR-10 datasets with accuracies of 98.67% and 89.85%, respectively, with energy-efficiency in the range of 15.4–138.6 TOPS/W.
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来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
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