基于差分进化的设备可靠性多重失效机制识别

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2023-10-31 DOI:10.1109/TDMR.2023.3328601
Uttara Chakraborty;Emmanuel Bender;Duane S. Boning;Carl V. Thompson
{"title":"基于差分进化的设备可靠性多重失效机制识别","authors":"Uttara Chakraborty;Emmanuel Bender;Duane S. Boning;Carl V. Thompson","doi":"10.1109/TDMR.2023.3328601","DOIUrl":null,"url":null,"abstract":"Assessing the reliability of electronic devices, circuits and packages requires accurate lifetime predictions and identification of failure modes. This paper demonstrates a new approach to the extraction of underlying failure mechanism distribution parameters from data corresponding to a combined distribution of two distinct mechanisms. Specifically, a differential evolution approach is developed for parameter identification in competing-risks and mixture models. Use of multiple metrics for performance evaluation shows that our approach outperforms the best-known methods in the literature. Numerical results are shown for simulated data and also for package-level and device-level real failure data. On the modeling of industrial package failure data, our approach provides up to 92% reduction in mean squared error, up to 7% increase in log-likelihood and up to 61% decrease in the maximum Kolmogorov-Smirnov distance. On ring oscillator data obtained from our laboratory experiments, the corresponding improvements are 94%, 5% and 77%, respectively. For both simulated and real datasets, the improvement in performance is validated through statistical tests of significance. An application of the approach is demonstrated for empirical extraction of the temperature-dependence of parameters from lifetime data at different test temperatures.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 4","pages":"599-614"},"PeriodicalIF":2.5000,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Identification of Multiple Failure Mechanisms for Device Reliability Using Differential Evolution\",\"authors\":\"Uttara Chakraborty;Emmanuel Bender;Duane S. Boning;Carl V. Thompson\",\"doi\":\"10.1109/TDMR.2023.3328601\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Assessing the reliability of electronic devices, circuits and packages requires accurate lifetime predictions and identification of failure modes. This paper demonstrates a new approach to the extraction of underlying failure mechanism distribution parameters from data corresponding to a combined distribution of two distinct mechanisms. Specifically, a differential evolution approach is developed for parameter identification in competing-risks and mixture models. Use of multiple metrics for performance evaluation shows that our approach outperforms the best-known methods in the literature. Numerical results are shown for simulated data and also for package-level and device-level real failure data. On the modeling of industrial package failure data, our approach provides up to 92% reduction in mean squared error, up to 7% increase in log-likelihood and up to 61% decrease in the maximum Kolmogorov-Smirnov distance. On ring oscillator data obtained from our laboratory experiments, the corresponding improvements are 94%, 5% and 77%, respectively. For both simulated and real datasets, the improvement in performance is validated through statistical tests of significance. An application of the approach is demonstrated for empirical extraction of the temperature-dependence of parameters from lifetime data at different test temperatures.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"23 4\",\"pages\":\"599-614\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2023-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10302448/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10302448/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

评估电子设备、电路和封装的可靠性需要准确的寿命预测和故障模式的识别。本文提出了一种从两种不同机制的组合分布数据中提取潜在破坏机制分布参数的新方法。具体而言,提出了一种用于竞争风险模型和混合模型参数识别的差分进化方法。使用多个指标进行绩效评估表明,我们的方法优于文献中最著名的方法。数值结果显示了模拟数据和包级和设备级的实际故障数据。在工业封装失效数据的建模中,我们的方法提供了高达92%的均方误差减少,高达7%的对数似然增加,高达61%的最大Kolmogorov-Smirnov距离减少。在环形振荡器的实验数据上,相应的改进率分别为94%、5%和77%。对于模拟和真实数据集,通过显著性统计检验验证了性能的改进。应用该方法从不同试验温度下的寿命数据中提取参数的温度依赖性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Identification of Multiple Failure Mechanisms for Device Reliability Using Differential Evolution
Assessing the reliability of electronic devices, circuits and packages requires accurate lifetime predictions and identification of failure modes. This paper demonstrates a new approach to the extraction of underlying failure mechanism distribution parameters from data corresponding to a combined distribution of two distinct mechanisms. Specifically, a differential evolution approach is developed for parameter identification in competing-risks and mixture models. Use of multiple metrics for performance evaluation shows that our approach outperforms the best-known methods in the literature. Numerical results are shown for simulated data and also for package-level and device-level real failure data. On the modeling of industrial package failure data, our approach provides up to 92% reduction in mean squared error, up to 7% increase in log-likelihood and up to 61% decrease in the maximum Kolmogorov-Smirnov distance. On ring oscillator data obtained from our laboratory experiments, the corresponding improvements are 94%, 5% and 77%, respectively. For both simulated and real datasets, the improvement in performance is validated through statistical tests of significance. An application of the approach is demonstrated for empirical extraction of the temperature-dependence of parameters from lifetime data at different test temperatures.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
期刊最新文献
Bound-Constrained Expectation Maximization for Weibull Competing-Risks Device Reliability Reliability Analysis of GaAs-PIN Limiter Under Ultra-Wideband Pulse Radiation Research of Single-Event Burnout in P-NiO/n-Ga2O3 Heterojunction Diode Table of Contents IEEE Transactions on Device and Materials Reliability Publication Information
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1