Keonhee Kim, Jae Gwang Lim, Su Man Hu, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Gyu Weon Hwang, Kyeong-Seok Lee, Seongsik Park, Wook-Seong Lee, Byeong-Kwon Ju, Jong Keuk Park, Inho Kim
{"title":"模拟突触器件中ge注入a- si衬底的Cu/SiOx记忆器件的多丝开关","authors":"Keonhee Kim, Jae Gwang Lim, Su Man Hu, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Gyu Weon Hwang, Kyeong-Seok Lee, Seongsik Park, Wook-Seong Lee, Byeong-Kwon Ju, Jong Keuk Park, Inho Kim","doi":"10.1038/s41427-023-00495-8","DOIUrl":null,"url":null,"abstract":"Abstract Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear conductance updates during training are efficiently essential to train neural networks. Although many different analog memristors have been proposed, a more reliable approach to implement analog synaptic devices is needed. In this study, we propose the memristor of a Cu/SiO x /implanted a-SiGe x /p ++ c-Si structure containing an a-Si layer with properly controlled conductance through Ge implantation. The a-SiGe x layer plays a multifunctional role in device operation by limiting the current overshoot, confining the heat generated during operation and preventing the silicide formation reaction between the active metal (Cu) and the Si bottom electrode. Thus, the a-SiGe x interface layer enables the formation of multi-weak filaments and induces analog switching behaviors. The TEM observation shows that the insertion of the a-SiGe x layer between SiO x and c-Si remarkably suppresses the formation of copper silicide, and reliable set/reset operations are secured. The origin of the analog switching behaviors is discussed by analyzing current-voltage characteristics and electron microscopy images. Finally, the memristive-neural network simulations show that our developed memristive devices provide high learning accuracy and are promising in future neuromorphic computing hardware.","PeriodicalId":19382,"journal":{"name":"Npg Asia Materials","volume":null,"pages":null},"PeriodicalIF":8.6000,"publicationDate":"2023-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices\",\"authors\":\"Keonhee Kim, Jae Gwang Lim, Su Man Hu, Yeonjoo Jeong, Jaewook Kim, Suyoun Lee, Joon Young Kwak, Jongkil Park, Gyu Weon Hwang, Kyeong-Seok Lee, Seongsik Park, Wook-Seong Lee, Byeong-Kwon Ju, Jong Keuk Park, Inho Kim\",\"doi\":\"10.1038/s41427-023-00495-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear conductance updates during training are efficiently essential to train neural networks. Although many different analog memristors have been proposed, a more reliable approach to implement analog synaptic devices is needed. In this study, we propose the memristor of a Cu/SiO x /implanted a-SiGe x /p ++ c-Si structure containing an a-Si layer with properly controlled conductance through Ge implantation. The a-SiGe x layer plays a multifunctional role in device operation by limiting the current overshoot, confining the heat generated during operation and preventing the silicide formation reaction between the active metal (Cu) and the Si bottom electrode. Thus, the a-SiGe x interface layer enables the formation of multi-weak filaments and induces analog switching behaviors. The TEM observation shows that the insertion of the a-SiGe x layer between SiO x and c-Si remarkably suppresses the formation of copper silicide, and reliable set/reset operations are secured. The origin of the analog switching behaviors is discussed by analyzing current-voltage characteristics and electron microscopy images. Finally, the memristive-neural network simulations show that our developed memristive devices provide high learning accuracy and are promising in future neuromorphic computing hardware.\",\"PeriodicalId\":19382,\"journal\":{\"name\":\"Npg Asia Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":8.6000,\"publicationDate\":\"2023-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Npg Asia Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1038/s41427-023-00495-8\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Npg Asia Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1038/s41427-023-00495-8","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices
Abstract Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear conductance updates during training are efficiently essential to train neural networks. Although many different analog memristors have been proposed, a more reliable approach to implement analog synaptic devices is needed. In this study, we propose the memristor of a Cu/SiO x /implanted a-SiGe x /p ++ c-Si structure containing an a-Si layer with properly controlled conductance through Ge implantation. The a-SiGe x layer plays a multifunctional role in device operation by limiting the current overshoot, confining the heat generated during operation and preventing the silicide formation reaction between the active metal (Cu) and the Si bottom electrode. Thus, the a-SiGe x interface layer enables the formation of multi-weak filaments and induces analog switching behaviors. The TEM observation shows that the insertion of the a-SiGe x layer between SiO x and c-Si remarkably suppresses the formation of copper silicide, and reliable set/reset operations are secured. The origin of the analog switching behaviors is discussed by analyzing current-voltage characteristics and electron microscopy images. Finally, the memristive-neural network simulations show that our developed memristive devices provide high learning accuracy and are promising in future neuromorphic computing hardware.
期刊介绍:
NPG Asia Materials is an open access, international journal that publishes peer-reviewed review and primary research articles in the field of materials sciences. The journal has a global outlook and reach, with a base in the Asia-Pacific region to reflect the significant and growing output of materials research from this area. The target audience for NPG Asia Materials is scientists and researchers involved in materials research, covering a wide range of disciplines including physical and chemical sciences, biotechnology, and nanotechnology. The journal particularly welcomes high-quality articles from rapidly advancing areas that bridge the gap between materials science and engineering, as well as the classical disciplines of physics, chemistry, and biology. NPG Asia Materials is abstracted/indexed in Journal Citation Reports/Science Edition Web of Knowledge, Google Scholar, Chemical Abstract Services, Scopus, Ulrichsweb (ProQuest), and Scirus.