用空腔黑体测量红外探测器的响应性

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2023-10-01 DOI:10.1088/1674-4926/44/10/102301
Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu
{"title":"用空腔黑体测量红外探测器的响应性","authors":"Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu","doi":"10.1088/1674-4926/44/10/102301","DOIUrl":null,"url":null,"abstract":"Abstract For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"12 1","pages":"0"},"PeriodicalIF":4.8000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The measurement of responsivity of infrared photodetectors using a cavity blackbody\",\"authors\":\"Nong Li, Dongwei Jiang, Guowei Wang, Weiqiang Chen, Wenguang Zhou, Junkai Jiang, Faran Chang, Hongyue Hao, Donghai Wu, Yingqiang Xu, Guiying Shen, Hui Xie, Jingming Liu, Youwen Zhao, Fenghua Wang, Zhichuan Niu\",\"doi\":\"10.1088/1674-4926/44/10/102301\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2023-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/44/10/102301\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-4926/44/10/102301","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

摘要在红外探测器的响应度测量中,最常用的辐射源是黑体。在这种测量系统中,黑体之间的距离、光电探测器和孔径直径是造成测量误差最大的两个参数。在这项工作中,我们详细描述了我们的响应度测量系统的配置,并提出了一种校准距离和孔径的方法。该校准方法的核心是通过将实验数据与计算结果拟合,将这两个参数的直接测量转化为提取过程。用商用扩展的InGaAs探测器在大范围的黑体温度、孔径和距离下进行了实验验证。然后将证明程序进一步扩展到我们实验室制造的检测器中,并获得了一致的结果。
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The measurement of responsivity of infrared photodetectors using a cavity blackbody
Abstract For the measurement of responsivity of an infrared photodetector, the most-used radiation source is a blackbody. In such a measurement system, distance between the blackbody, the photodetector and the aperture diameter are two parameters that contribute most measurement errors. In this work, we describe the configuration of our responsivity measurement system in great detail and present a method to calibrate the distance and aperture diameter. The core of this calibration method is to transfer direct measurements of these two parameters into an extraction procedure by fitting the experiment data to the calculated results. The calibration method is proved experimentally with a commercially extended InGaAs detector at a wide range of blackbody temperature, aperture diameter and distance. Then proof procedures are further extended into a detector fabricated in our laboratory and consistent results were obtained.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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