80ghz DCO采用改进的SC阶梯和改进的基于dcl的混合调谐库

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2023-10-01 DOI:10.1088/1674-4926/44/10/102402
Lu Tang, Yi Chen, Kui Wang
{"title":"80ghz DCO采用改进的SC阶梯和改进的基于dcl的混合调谐库","authors":"Lu Tang, Yi Chen, Kui Wang","doi":"10.1088/1674-4926/44/10/102402","DOIUrl":null,"url":null,"abstract":"Abstract An 80-GHz DCO based on modified hybrid tuning banks is introduced in this paper. To achieve sub-MHz frequency resolution with reduced circuit complexity, the improved circuit topology replaces the conventional circuit topology with two binary-weighted SC cells, enabling eight SC-cell-based improved SC ladders to achieve the same fine-tuning steps as twelve SC-cell-based conventional SC ladders. To achieve lower phase noise and smaller chip size, the promoted binary-weighted digitally controlled transmission lines (DCTLs) are used to implement the coarse and medium tuning banks of the DCO. Compared to the conventional thermometer-coded DCTLs, control bits of the proposed DCTLs are reduced from 30 to 8, and the total length is reduced by 34.3% (from 122.76 to 80.66 μ m). Fabricated in 40-nm CMOS, the DCO demonstrated in this work features a small fine-tuning step (483 kHz), a high oscillation frequency (79–85 GHz), and a smaller chip size (0.017 mm 2 ). Compared to previous work, the modified DCO exhibits an excellent figure of merit with an area (FoM A ) of –198 dBc/Hz.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"36 1","pages":"0"},"PeriodicalIF":4.8000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An 80-GHz DCO utilizing improved SC ladder and promoted DCTL-based hybrid tuning banks\",\"authors\":\"Lu Tang, Yi Chen, Kui Wang\",\"doi\":\"10.1088/1674-4926/44/10/102402\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract An 80-GHz DCO based on modified hybrid tuning banks is introduced in this paper. To achieve sub-MHz frequency resolution with reduced circuit complexity, the improved circuit topology replaces the conventional circuit topology with two binary-weighted SC cells, enabling eight SC-cell-based improved SC ladders to achieve the same fine-tuning steps as twelve SC-cell-based conventional SC ladders. To achieve lower phase noise and smaller chip size, the promoted binary-weighted digitally controlled transmission lines (DCTLs) are used to implement the coarse and medium tuning banks of the DCO. Compared to the conventional thermometer-coded DCTLs, control bits of the proposed DCTLs are reduced from 30 to 8, and the total length is reduced by 34.3% (from 122.76 to 80.66 μ m). Fabricated in 40-nm CMOS, the DCO demonstrated in this work features a small fine-tuning step (483 kHz), a high oscillation frequency (79–85 GHz), and a smaller chip size (0.017 mm 2 ). Compared to previous work, the modified DCO exhibits an excellent figure of merit with an area (FoM A ) of –198 dBc/Hz.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2023-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/44/10/102402\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-4926/44/10/102402","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

介绍了一种基于改进混合调谐组的80 ghz DCO。为了在降低电路复杂度的同时实现sub-MHz的频率分辨率,改进的电路拓扑结构用两个二元加权SC单元取代了传统的电路拓扑结构,使8个基于SC单元的改进SC阶梯能够实现与12个基于SC单元的传统SC阶梯相同的微调步骤。为了实现更低的相位噪声和更小的芯片尺寸,采用改进的二值加权数字控制传输线(DCTLs)来实现DCO的粗调谐组和中调谐组。与传统的温度计编码dctl相比,该dctl的控制位从30位减少到8位,总长度减少34.3%(从122.76 μ m减少到80.66 μ m)。该DCO采用40 nm CMOS制造,具有微调步长小(483 kHz)、振荡频率高(79-85 GHz)和芯片尺寸小(0.017 mm 2)的特点。与以前的工作相比,改进的DCO具有-198 dBc/Hz的面积(FoM A)。
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An 80-GHz DCO utilizing improved SC ladder and promoted DCTL-based hybrid tuning banks
Abstract An 80-GHz DCO based on modified hybrid tuning banks is introduced in this paper. To achieve sub-MHz frequency resolution with reduced circuit complexity, the improved circuit topology replaces the conventional circuit topology with two binary-weighted SC cells, enabling eight SC-cell-based improved SC ladders to achieve the same fine-tuning steps as twelve SC-cell-based conventional SC ladders. To achieve lower phase noise and smaller chip size, the promoted binary-weighted digitally controlled transmission lines (DCTLs) are used to implement the coarse and medium tuning banks of the DCO. Compared to the conventional thermometer-coded DCTLs, control bits of the proposed DCTLs are reduced from 30 to 8, and the total length is reduced by 34.3% (from 122.76 to 80.66 μ m). Fabricated in 40-nm CMOS, the DCO demonstrated in this work features a small fine-tuning step (483 kHz), a high oscillation frequency (79–85 GHz), and a smaller chip size (0.017 mm 2 ). Compared to previous work, the modified DCO exhibits an excellent figure of merit with an area (FoM A ) of –198 dBc/Hz.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
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