利用超cmos磁电自旋轨道(MESO)技术实现超低电源电压的节能逻辑和存储器设计

IF 2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Pub Date : 2023-10-05 DOI:10.1109/JXCDC.2023.3322292
Rohit Rothe;Hai Li;Dmitri E. Nikonov;Ian A. Young;Kyojin Choo;David Blaauw
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引用次数: 0

摘要

基于自旋作为基本计算单元的器件,由于其能效和与 CMOS 的兼容性,为超越互补金属氧化物半导体(CMOS)器件提供了一种前景广阔的选择。磁电自旋轨道(MESO)器件就是这样一种选择,它是一种阿托焦耳级的新兴技术,有望扩展摩尔定律。本文介绍了针对 MESO 器件技术的电路设计和优化技术,如器件堆叠和基于金丝雀电路的异步时钟脉冲生成方案。利用这些有针对性的电路技术,MESO的能效可以提高1.5倍。 此外,文章还提出了新颖的算术逻辑架构,并有效地实现了内存计算,充分利用了这一前景广阔的新技术的独特性能。
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Energy Efficient Logic and Memory Design With Beyond-CMOS Magnetoelectric Spin–Orbit (MESO) Technology Toward Ultralow Supply Voltage
Devices based on the spin as the fundamental computing unit provide a promising beyond-complementary metal–oxide–semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. One such option is a magnetoelectric spin–orbit (MESO) device, an attojoule-class emerging technology promising to extend Moore’s law. This article presents circuit design and optimization techniques, such as device stacking and a canary circuit-based asynchronous clock pulse generation scheme for MESO device technology. With these targeted circuit techniques, the MESO energy efficiency can be improved by $\sim 1.5\times $ . Novel architectures for arithmetic logic and effective realization of in-memory computing are also proposed that utilize the unique properties of this promising new technology.
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来源期刊
CiteScore
5.00
自引率
4.20%
发文量
11
审稿时长
13 weeks
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