{"title":"采用标准CMOS技术设计宽带高线性跨阻放大器","authors":"Zheng Gu, Siqi Wang, Chungang Lu, Lei Song, Zhenghao Lu, Yonghua Chu, Xiaopeng Yu","doi":"10.2478/jee-2023-0049","DOIUrl":null,"url":null,"abstract":"Abstract In this paper, the design methodology of a high-linearity wide-band transimpedance amplifier (TIA) for cable television (CATV) application is addressed. A simple four-stage topology is proposed to maintain a well-balanced linearity over a wide operating band. The regulated cascode (RGC) input stage is used to match an input impedance of 75 Ω, followed by a gain stage with enhanced bandwidth. The high-linearity output stage is able to drive the 75 Ω load directly with high output swing under a high supply voltage. The prototype is implemented with a standard 0.11μm CMOS process while occupying the silicon area of 0.034 mm 2 . The measurement results for the prototype show a peak gain of 76.6 dBΩ over a 3-dB bandwidth of 1.1 GHz with a considerably small gain ripple and an OIP 3 of 20.4 dBm. The whole test chip consumes 447 mW DC power and the measured average input-referred noise current spectral density is 7.9 pA Hz −1/2 up to 1 GHz.","PeriodicalId":15661,"journal":{"name":"Journal of Electrical Engineering-elektrotechnicky Casopis","volume":"36 1","pages":"0"},"PeriodicalIF":1.0000,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of wide-band high-linearity transimpedance amplifier using standard CMOS technology\",\"authors\":\"Zheng Gu, Siqi Wang, Chungang Lu, Lei Song, Zhenghao Lu, Yonghua Chu, Xiaopeng Yu\",\"doi\":\"10.2478/jee-2023-0049\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Abstract In this paper, the design methodology of a high-linearity wide-band transimpedance amplifier (TIA) for cable television (CATV) application is addressed. A simple four-stage topology is proposed to maintain a well-balanced linearity over a wide operating band. The regulated cascode (RGC) input stage is used to match an input impedance of 75 Ω, followed by a gain stage with enhanced bandwidth. The high-linearity output stage is able to drive the 75 Ω load directly with high output swing under a high supply voltage. The prototype is implemented with a standard 0.11μm CMOS process while occupying the silicon area of 0.034 mm 2 . The measurement results for the prototype show a peak gain of 76.6 dBΩ over a 3-dB bandwidth of 1.1 GHz with a considerably small gain ripple and an OIP 3 of 20.4 dBm. The whole test chip consumes 447 mW DC power and the measured average input-referred noise current spectral density is 7.9 pA Hz −1/2 up to 1 GHz.\",\"PeriodicalId\":15661,\"journal\":{\"name\":\"Journal of Electrical Engineering-elektrotechnicky Casopis\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Electrical Engineering-elektrotechnicky Casopis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.2478/jee-2023-0049\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electrical Engineering-elektrotechnicky Casopis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.2478/jee-2023-0049","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
介绍了一种用于有线电视(CATV)的高线性宽带跨阻放大器(TIA)的设计方法。提出了一种简单的四级拓扑结构,以在宽工作频带内保持良好的平衡线性。调节级联码(RGC)输入级用于匹配75 Ω的输入阻抗,然后是带宽增强的增益级。高线性输出级能够在高电源电压下以高输出摆幅直接驱动75 Ω负载。该原型机采用标准的0.11μm CMOS工艺,占据0.034 mm 2的硅面积。测量结果表明,在1.1 GHz的3db带宽下,样机的峰值增益为76.6 dBΩ,增益纹波相当小,OIP 3为20.4 dBm。整个测试芯片的直流功耗为447 mW,测量到的平均输入参考噪声电流谱密度为7.9 pA Hz−1/2至1 GHz。
Design of wide-band high-linearity transimpedance amplifier using standard CMOS technology
Abstract In this paper, the design methodology of a high-linearity wide-band transimpedance amplifier (TIA) for cable television (CATV) application is addressed. A simple four-stage topology is proposed to maintain a well-balanced linearity over a wide operating band. The regulated cascode (RGC) input stage is used to match an input impedance of 75 Ω, followed by a gain stage with enhanced bandwidth. The high-linearity output stage is able to drive the 75 Ω load directly with high output swing under a high supply voltage. The prototype is implemented with a standard 0.11μm CMOS process while occupying the silicon area of 0.034 mm 2 . The measurement results for the prototype show a peak gain of 76.6 dBΩ over a 3-dB bandwidth of 1.1 GHz with a considerably small gain ripple and an OIP 3 of 20.4 dBm. The whole test chip consumes 447 mW DC power and the measured average input-referred noise current spectral density is 7.9 pA Hz −1/2 up to 1 GHz.
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