{"title":"用于CMOS图像传感器的低功耗增量Delta-sigma自适应偏置ADC","authors":"Dong-Hwan Seo, Jung-Gyun Kim, Byung-Geun Lee","doi":"10.5573/jsts.2023.23.5.314","DOIUrl":null,"url":null,"abstract":"This paper presents the design and fabrication of a low-power incremental delta-sigma analog-to-digital converter (ADC) with an adaptive bias technique suitable for complimentary metaloxide semiconductor (CMOS) image sensors (CISs). The adaptive biasing circuitry provides the amplifier with a predicted minimum current value required for the integrator output to settle; this optimized current flows through the amplifier and reduces power consumption by 40%. A prototype ADC fabricated using a 0.18 μm CMOS process, achieves an SNDR of 65 dB at a sampling frequency of 25 MHz and consumes 13.5 μW from a 1.8 V power supply. The measured differential and integral nonlinearities are +0.31/-0.42 and +0.62/-0.75 at a 12-bit accuracy, respectively.","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":"9 2","pages":"0"},"PeriodicalIF":0.5000,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low-power Incremental Delta-sigma ADC with Adaptive Biasing for CMOS Image Sensors\",\"authors\":\"Dong-Hwan Seo, Jung-Gyun Kim, Byung-Geun Lee\",\"doi\":\"10.5573/jsts.2023.23.5.314\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design and fabrication of a low-power incremental delta-sigma analog-to-digital converter (ADC) with an adaptive bias technique suitable for complimentary metaloxide semiconductor (CMOS) image sensors (CISs). The adaptive biasing circuitry provides the amplifier with a predicted minimum current value required for the integrator output to settle; this optimized current flows through the amplifier and reduces power consumption by 40%. A prototype ADC fabricated using a 0.18 μm CMOS process, achieves an SNDR of 65 dB at a sampling frequency of 25 MHz and consumes 13.5 μW from a 1.8 V power supply. The measured differential and integral nonlinearities are +0.31/-0.42 and +0.62/-0.75 at a 12-bit accuracy, respectively.\",\"PeriodicalId\":17067,\"journal\":{\"name\":\"Journal of Semiconductor Technology and Science\",\"volume\":\"9 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2023-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductor Technology and Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5573/jsts.2023.23.5.314\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductor Technology and Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5573/jsts.2023.23.5.314","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Low-power Incremental Delta-sigma ADC with Adaptive Biasing for CMOS Image Sensors
This paper presents the design and fabrication of a low-power incremental delta-sigma analog-to-digital converter (ADC) with an adaptive bias technique suitable for complimentary metaloxide semiconductor (CMOS) image sensors (CISs). The adaptive biasing circuitry provides the amplifier with a predicted minimum current value required for the integrator output to settle; this optimized current flows through the amplifier and reduces power consumption by 40%. A prototype ADC fabricated using a 0.18 μm CMOS process, achieves an SNDR of 65 dB at a sampling frequency of 25 MHz and consumes 13.5 μW from a 1.8 V power supply. The measured differential and integral nonlinearities are +0.31/-0.42 and +0.62/-0.75 at a 12-bit accuracy, respectively.
期刊介绍:
Journal of Semiconductor Technology and Science is published to provide a forum for R&D people involved in every aspect of the integrated circuit technology, i.e., VLSI fabrication process technology, VLSI device technology, VLSI circuit design and other novel applications of this mass production technology. When IC was invented, these people worked together in one place. However, as the field of IC expanded, our individual knowledge became narrower, creating different branches in the technical society, which has made it more difficult to communicate as a whole. The fisherman, however, always knows that he can capture more fish at the border where warm and cold-water meet. Thus, we decided to go backwards gathering people involved in all VLSI technology in one place.