首页 > 最新文献

Journal of Semiconductor Technology and Science最新文献

英文 中文
Interfacial Trap-based 1-row Hammer Analysis of BCAT and Nitride Layer BCAT Structures in Dynamic Random Access Memory 基于界面陷阱的动态随机存取存储器中 BCAT 和氮化物层 BCAT 结构的 1 排锤击分析
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.18
Chang-Young Lim, Yeon-Seok Kim, Min-Woo Kwon
{"title":"Interfacial Trap-based 1-row Hammer Analysis of BCAT and Nitride Layer BCAT Structures in Dynamic Random Access Memory","authors":"Chang-Young Lim, Yeon-Seok Kim, Min-Woo Kwon","doi":"10.5573/jsts.2024.24.1.18","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.18","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140414203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor 双栅极反馈场效应晶体管的高温特性分析
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.33
Myeongho Park, Kichan Kim, Seungyeon Oh, Il-Hwan Cho
{"title":"Analysis of High Temperature Characteristics of Double Gate Feedback Field Effect Transistor","authors":"Myeongho Park, Kichan Kim, Seungyeon Oh, Il-Hwan Cho","doi":"10.5573/jsts.2024.24.1.33","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.33","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140410854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array 基于内存的突触阵列内更实用的 MAC 运行能效指标
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.47
Seongjae Cho, Sung-Tae Lee, Soomin Kim, Hyungcheol Shin
{"title":"A More Practical Indicator of MAC Operational Power Efficiency inside Memory-based Synapse Array","authors":"Seongjae Cho, Sung-Tae Lee, Soomin Kim, Hyungcheol Shin","doi":"10.5573/jsts.2024.24.1.47","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.47","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140411293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 1.03MOPS/W Lattice-based Post-quantum Cryptography Processor for IoT Devices 面向物联网设备的 1.03MOPS/W 基于晶格的后量子加密处理器
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.55
Byungjun Kim, Han-Gyeol Mun, Shinwoong Kim, JongMin Lee, Jae-Yoon Sim
{"title":"A 1.03MOPS/W Lattice-based Post-quantum Cryptography Processor for IoT Devices","authors":"Byungjun Kim, Han-Gyeol Mun, Shinwoong Kim, JongMin Lee, Jae-Yoon Sim","doi":"10.5573/jsts.2024.24.1.55","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.55","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140413907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier 采用凹栅极和超薄再生氮化铝势垒的常关断氮化镓基 MIS-HEMT 性能提升
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.25
Shogo Maeda, K. Shinohara, M. Empizo, Nobuhiko Sarukura, M. Kuzuhara, Akio Yamamoto, J. Asubar, S. Kawabata, I. Nagase, A. Baratov, Masaki Ishiguro, Toi Nezu, T. Igarashi, Kishi Sekiyama, S. Terai
{"title":"Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier","authors":"Shogo Maeda, K. Shinohara, M. Empizo, Nobuhiko Sarukura, M. Kuzuhara, Akio Yamamoto, J. Asubar, S. Kawabata, I. Nagase, A. Baratov, Masaki Ishiguro, Toi Nezu, T. Igarashi, Kishi Sekiyama, S. Terai","doi":"10.5573/jsts.2024.24.1.25","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.25","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140415061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Provisioning CSD-based Storage Systems with Erasure-coding Offloaded to the CSD 利用卸载到 CSD 的擦除编码调配基于 CSD 的存储系统
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.8
H.I. Byun, Safdar Jamil, Junghyun Ryu, Sung-Soon Park, Myungcheol Lee, Sung-Soon Park, Youngjae Kim
{"title":"Provisioning CSD-based Storage Systems with Erasure-coding Offloaded to the CSD","authors":"H.I. Byun, Safdar Jamil, Junghyun Ryu, Sung-Soon Park, Myungcheol Lee, Sung-Soon Park, Youngjae Kim","doi":"10.5573/jsts.2024.24.1.8","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.8","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140414125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Stoichiometry Dependence of Ambipolar SiGe Tunnel Field-effect Transistors and Its Effect on the Transient Performance Improvement 双极硅锗隧道场效应晶体管的表面化学计量依赖性及其对瞬态性能改善的影响
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.1
Minjeong Ryu, Woo-Young Choi
{"title":"Surface Stoichiometry Dependence of Ambipolar SiGe Tunnel Field-effect Transistors and Its Effect on the Transient Performance Improvement","authors":"Minjeong Ryu, Woo-Young Choi","doi":"10.5573/jsts.2024.24.1.1","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.1","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140416876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A High Power Supply Rejection and Fast-transient LDO with Feed-forward Compensation using Current Sensing Technique 一种利用电流感应技术进行前馈补偿的高电源抑制和快速瞬态 LDO
IF 0.4 4区 工程技术 Q4 Engineering Pub Date : 2024-02-29 DOI: 10.5573/jsts.2024.24.1.41
Bongsu Kim, Seung-Myeong Yu, Jongchan An, Gwangmyeong An, Junyoung Song
{"title":"A High Power Supply Rejection and Fast-transient LDO with Feed-forward Compensation using Current Sensing Technique","authors":"Bongsu Kim, Seung-Myeong Yu, Jongchan An, Gwangmyeong An, Junyoung Song","doi":"10.5573/jsts.2024.24.1.41","DOIUrl":"https://doi.org/10.5573/jsts.2024.24.1.41","url":null,"abstract":"","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.4,"publicationDate":"2024-02-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140410031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In-depth Survey of Processing-in-memory Architectures for Deep Neural Networks 深度神经网络内存处理体系结构的深入研究
4区 工程技术 Q4 Engineering Pub Date : 2023-10-31 DOI: 10.5573/jsts.2023.23.5.322
Ji-Hoon Jang, Jin Shin, Jun-Tae Park, In-Seong Hwang, Hyun Kim
Processing-in-Memory (PIM) is an emerging computing architecture that has gained significant attention in recent times. It aims to maximize data movement efficiency by moving away from the traditional von Neumann architecture. PIM is particularly well-suited for handling deep neural networks (DNNs) that require significant data movement between the processing unit and the memory device. As a result, there has been substantial research in this area. To optimally handle DNNs with diverse structures and inductive biases, such as convolutional neural networks, graph convolutional networks, recurrent neural networks, and transformers, within a PIM architecture, careful consideration should be given to how data mapping and data flow are processed in PIM. This paper aims to provide insight into these aspects by analyzing the characteristics of various DNNs and providing detailed explanations of how they have been implemented with PIM architectures using commercially available memory technologies like DRAM and next-generation memory technologies like ReRAM.
内存中处理(PIM)是一种新兴的计算体系结构,近年来得到了极大的关注。它旨在通过摆脱传统的冯·诺伊曼架构来最大化数据移动效率。PIM特别适合处理需要在处理单元和存储设备之间进行大量数据移动的深度神经网络(dnn)。因此,在这一领域进行了大量的研究。为了在PIM架构中最优地处理具有不同结构和归纳偏差的dnn,例如卷积神经网络、图卷积网络、循环神经网络和变压器,应该仔细考虑PIM中如何处理数据映射和数据流。本文旨在通过分析各种深度神经网络的特征,并详细解释如何使用商用内存技术(如DRAM)和下一代内存技术(如ReRAM)在PIM架构中实现它们,从而深入了解这些方面。
{"title":"In-depth Survey of Processing-in-memory Architectures for Deep Neural Networks","authors":"Ji-Hoon Jang, Jin Shin, Jun-Tae Park, In-Seong Hwang, Hyun Kim","doi":"10.5573/jsts.2023.23.5.322","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.5.322","url":null,"abstract":"Processing-in-Memory (PIM) is an emerging computing architecture that has gained significant attention in recent times. It aims to maximize data movement efficiency by moving away from the traditional von Neumann architecture. PIM is particularly well-suited for handling deep neural networks (DNNs) that require significant data movement between the processing unit and the memory device. As a result, there has been substantial research in this area. To optimally handle DNNs with diverse structures and inductive biases, such as convolutional neural networks, graph convolutional networks, recurrent neural networks, and transformers, within a PIM architecture, careful consideration should be given to how data mapping and data flow are processed in PIM. This paper aims to provide insight into these aspects by analyzing the characteristics of various DNNs and providing detailed explanations of how they have been implemented with PIM architectures using commercially available memory technologies like DRAM and next-generation memory technologies like ReRAM.","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136017536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Security Problems of Latest FPGAs and Reverse Engineering Methods of Xilinx 7-series FPGAs 最新fpga的安全问题及Xilinx 7系列fpga的逆向工程方法
4区 工程技术 Q4 Engineering Pub Date : 2023-10-31 DOI: 10.5573/jsts.2023.23.5.283
Dongchan Lee, Sanghyun Lee, Mannhee Cho, Hyung-Min Lee, Youngmin Kim
Field programmable gate arrays (FPGA) are commonly used in modern electronic applications, such as home appliances, automobiles, aerospace applications, and Internet of Things (IoT). However, security research is still insufficient compared to the rapidly developing design using FPGA. Attackers frequently attempt to hack into the vulnerable security of FPGA and introduce malicious codes, such as trojan. To defend against these attacks, it is necessary to determine the structure of FPGA accurately and study hackers
现场可编程门阵列(FPGA)通常用于现代电子应用,如家用电器、汽车、航空航天应用和物联网(IoT)。然而,与快速发展的FPGA设计相比,安全性研究仍然不足。攻击者经常试图入侵FPGA的安全漏洞,并引入恶意代码,如木马。为了防御这些攻击,有必要准确地确定FPGA的结构并对黑客进行研究
{"title":"Security Problems of Latest FPGAs and Reverse Engineering Methods of Xilinx 7-series FPGAs","authors":"Dongchan Lee, Sanghyun Lee, Mannhee Cho, Hyung-Min Lee, Youngmin Kim","doi":"10.5573/jsts.2023.23.5.283","DOIUrl":"https://doi.org/10.5573/jsts.2023.23.5.283","url":null,"abstract":"Field programmable gate arrays (FPGA) are commonly used in modern electronic applications, such as home appliances, automobiles, aerospace applications, and Internet of Things (IoT). However, security research is still insufficient compared to the rapidly developing design using FPGA. Attackers frequently attempt to hack into the vulnerable security of FPGA and introduce malicious codes, such as trojan. To defend against these attacks, it is necessary to determine the structure of FPGA accurately and study hackers","PeriodicalId":17067,"journal":{"name":"Journal of Semiconductor Technology and Science","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136018052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Journal of Semiconductor Technology and Science
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1